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                                                                                                                                    S901 5



TRANSISTOR(PNP)
                                                                                          SOT-23



FEATURES
                                                                                          1. BASE
   Complementary to S9014                                                                 2. EMITTER
                                                                                          3. COLLECTOR

MARKING: M6

MAXIMUM RATINGS (TA=25 unless otherwise noted)

            Symbol                                  Parameter                                   Value                                 Units
     VCBO              Collector-Base Voltage                                                       -50                                    V
     VCEO              Collector-Emitter Voltage                                                    -45                                    V
     VEBO              Emitter-Base Voltage                                                         -5                                     V
     IC                Collector Current -Continuous                                                -0.1                                   A
     PC                Collector Power Dissipation                                                  0.2                                    W
     Tj                Junction Temperature                                                         150                                    
     Tstg              Storage Temperature                                                     -55-150                                     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                             Symbol       Test     conditions      MIN               TYP                  MAX        UNIT

     Collector-base breakdown voltage                  V(BR)CBO   IC= -100A, IE=0             -50                                               V

     Collector-emitter breakdown voltage               V(BR)CEO   IC = -0.1mA, IB=0           -45                                               V

     Emitter-base breakdown voltage                    V(BR)EBO   IE=-100A, IC=0               -5                                               V

     Collector cut-off current                            ICBO    VCB=-50 V, IE=0                                                   -0.1        A

     Emitter cut-off current                              IEBO    VEB= -5V, IC=0                                                    -0.1        A

     DC current gain                                      hFE     VCE=-5V, IC= -1mA           200                                   1000

     Collector-emitter saturation voltage              VCE(sat)   IC=-100mA, IB= -10mA                                              -0.3        V

     Base-emitter saturation voltage                   VBE(sat)   IC=-100mA, IB=-10mA                                                -1         V

                                                                  VCE=-5V,   IC= -10mA
     Transition frequency                                  fT                                 150                                              MHz
                                                                  f=30MHz
CLASSIFICATION OF                hFE
     Rank                                             L                                                    H
     Range                                         200-450                                           450-1000


 1




JinYu                                               www.htsemi.com
semiconductor

                                                                                                                     Date:2011/05
                                                S901 5




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05

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