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SS8 550
TRANSISTOR(PNP)
SOT-323
FEATURES
Complimentary to SS8050
MARKING: Y2 1. Base
2. Emitter
3. Collector
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 0.2 W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
hFE(1) VCE=-1V, IC=-100mA 120 400
DC current gain
hFE(2) VCE=-1V, IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V
Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
VCE=-10V,IC=-50mA,
Transition frequency fT 100 MHz
f=30MHz
output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
SS8 550
-0.5 1000
VCE = -1V
IB=-4.0mA
-0.4 IB=-3.5mA
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
IB=-3.0mA 100
-0.3 IB=-2.5mA
IB=-2.0mA
-0.2 IB=-1.5mA
10
IB=-1.0mA
-0.1
IB=-0.5mA
1
-0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
-10000 -100
IC=10IB VCE = -1V
IC[mA], COLLECTOR CURRENT
-1000 -10
VBE(sat)
-100 -1
VCE(sat)
-10 -0.1
-0.1 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
100 1000
f=1MHz VCE=-10V
IE=0
Cob[pF], CAPACITANCE
10 100
1 10
-1 -10 -100 -1000 -1 -10 -100 -1000
VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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