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std123s


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                                                                                                                      STD1 23S



TRANSISTOR(NPN)
                                                                                             SOT-23

 FEATURES
      Low saturation medium current application                                              1. BASE
      Extremely low collector saturation voltage                                             2. EMITTER
      Suitable for low voltage large current drivers                                         3. COLLECTOR
      High DC current gain and large current capability
      Low on resistance : RON=0.6(Max.) (IB=1mA)

Marking:123

MAXIMUM RATINGS (TA=25 unless otherwise noted)

           Symbol                                      Parameter                                        Value                          Units
VCBO                       Collector-Base Voltage                                                           20                              V
VCEO                       Collector-Emitter Voltage                                                        15                              V
VEBO                       Emitter-Base Voltage                                                           6.5                               V
IC                         Collector Current -Continuous                                                     1                              A
PC                         Collector Power Dissipation                                                    350                           mW
Tj                         Junction Temperature                                                           150                               
Tstg                       Storage Temperature                                                         -55-150                              

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                    Parameter                              Symbol       Test   conditions              MIN       TYP                  MAX       UNIT

         Collector-base breakdown voltage                V (BR) CBO     IC=50A, IE=0                   20                                        V

         Collector-emitter breakdown voltage             V (BR) CEO     IC =1mA, IB=0                  15                                        V

         Emitter-base breakdown voltage                    V (BR) EBO   IE= 50A, IC=0                  6.5                                       V

         Collector cut-off current                           ICBO       VCB= 20 V, IE=0                                               0.1       A

         Emitter cut-off current                             IEBO       VEB= 6V, IC=0                                                 0.1       A

         DC current gain                                      hFE       VCE=1V, IC= 100mA              150

         Collector-emitter saturation voltage            VCE (sat)      IC=500mA, IB= 50mA                                            0.3        V

         Transition frequency                                  fT       VCE=5V,    IC=50mA                       260                            MHz

         Collector output capacitance                        Cob        VCB=10V, IE=0, f=1MHz                     5                             pF

                                                                        f=1KHz,IB=1mA,
         On resistance                                       RON                                                 0.6                             
                                                                        VIN=0.3V

     1




 JinYu                                                 www.htsemi.com
 semiconductor

                                                                                                                       Date:2011/05
                                 STD1 23S




2




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05



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