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                                                       Advanced Technical Information


High Voltage, High Gain                                       IXBH 16N170A                           VCES               = 1700 V
                     TM
BIMOSFET Monolithic                                           IXBT 16N170A                           IC25               = 16 A
Bipolar MOS Transistor                                                                               VCE(sat)           = 6.0 V
                                                                                                     tfi(typ)           = 50 ns


Symbol          Test Conditions                                            Maximum Ratings           TO-268
                                                                                                     (IXBT)
VCES            TJ = 25

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