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ixbh42n170_ixbt42n170


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High Voltage, High Gain                            IXBH42N170                             VCES = 1700V
BIMOSFETTM Monolithic
Bipolar MOS Transistor
                                                   IXBT42N170                             IC90 = 42A
                                                                                          VCE(sat)  2.8V



                                                                                          TO-247 (IXBH)
Symbol     Test Conditions                                       Maximum Ratings
VCES        TC = 25



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