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                                            Advance Technical Information

GigaMOSTM                                             IXFK170N20T                           VDSS           =    200V
Power MOSFET                                          IXFX170N20T                           ID25           =    170A
                                                                                            RDS(on)             11m 
N-Channel Enhancement Mode
                                                                                            trr                 200ns
Avalanche Rated
Fast Intrinsic Diode                                                                        TO-264 (IXFK)




Symbol        Test Conditions                                   Maximum Ratings
                                                                                               G
VDSS          TJ = 25



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