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ixfk102n30p


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                                           Preliminary Technical Information


PolarHTTM HiPerFET IXFK 102N30P                                                                    VDSS        =      300 V
Power MOSFET                                                                                       ID25        =      102 A
                                                                                                   RDS(on)            33 m 
N-Channel Enhancement Mode                                                                         trr                200 ns
Fast Intrinsic Diode
Avalanche Rated

Symbol         Test Conditions                                     Maximum Ratings

VDSS           TJ = 25



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