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                                           Advance Technical Information

GigaMOSTM                                            IXFN160N30T                     VDSS         =       300V
Power MOSFET                                                                         ID25         =       130A
                                                                                     RDS(on)              19m 
                                                                                     trr                  200ns
N-Channel Enhancement Mode
Avalanche Rated                                                                      miniBLOC, SOT-227
Fast Intrinsic Diode                                                                      E153432


                                                                                                      S
Symbol       Test Conditions                              Maximum Ratings                     G

VDSS         TJ = 25

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