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ixfn200n10p


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PolarTM HiPerFET                                IXFN 200N10P                                            VDSS = 100 V
Power MOSFET                                                                                            ID25 = 200 A
                                                                                                        RDS(on)  7.5 m
N-Channel Enhancement Mode                                                                              trr      150 ns
Fast Intrinsic Diode
Avalanche Rated

                                                                                                 miniBLOC, SOT-227 B (IXFN)
Symbol         Test Conditions                                      Maximum Ratings                   E153432
                                                                                                                  S
VDSS           TJ = 25



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