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PolarHTTM HiPerFET IXFR 102N30P                                                                      VDSS = 300 V
Power MOSFET                                                                                         ID25 = 60 A
                                                                                                     RDS(on)  36 m 
(Electrically Isolated Back Surface)
                                                                                                     trr      200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated




Symbol         Test Conditions                                    Maximum Ratings

VDSS           TJ = 25

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