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PolarHVTM HiPerFET                                 IXFR 24N80P                             VDSS          =       800            V
Power MOSFET                                                                               ID25          =        13            A
                                                                                           RDS(on)               420           m
(Electrically Isolated Back Surface)
                                                                                           trr                   200           ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode


Symbol         Test Conditions                                   Maximum Ratings           ISOPLUS247 (IXFR)
                                                                                                E153432
VDSS           TJ = 25

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