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PolarHVTM HiPerFET                                      IXFR 64N60P                               VDSS         =       600   V
                                                                                                  ID25         =        36  A
Power MOSFET                                                                                      RDS(on)              105 m 
(Electrically Isolated Back Surface)
                                                                                                  trr                  200 ns

N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
                                                                                              ISOPLUS247 (IXFR)
Symbol         Test Conditions                                      Maximum Ratings                E153432

VDSS           TJ = 25

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