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ixgq20n120b


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High Voltage IGBT with Diode                                                            VCES               = 1200     V
                                                  IXGQ 20N120B                          IC25               = 40       A
                                                  IXGQ 20N120BD1                        VCE(sat)           = 3.4      V
                                                                                        tfi(typ)           = 160     ns


                                                                             BD1

Symbol         Test Conditions                                 Maximum Ratings          TO-3P (IXGQ)

VCES           TJ = 25



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