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                                               Preliminary Technical Information

TrenchMVTM                                          IXTA160N10T                                 VDSS         = 100 V
Power MOSFET                                        IXTP160N10T                                 ID25         = 160 A
                                                                                                RDS(on)       7.0 m
N-Channel Enhancement Mode
Avalanche Rated
                                                                                                TO-263 (IXTA)



                                                                                                       G
                                                                                                             S
Symbol        Test Conditions                                      Maximum Ratings
                                                                                                                      (TAB)
V DSS         TJ = 25

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