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ixtc160n10t


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                                         Preliminary Technical Information

TrenchMVTM                                     IXTC160N10T                                      VDSS            = 100 V
Power MOSFET                                                                                    ID25            = 83  A
(Electrically Isolated Back Surface)                                                            RDS(on)          7.5 m
N-Channel Enhancement Mode
Avalanche Rated




Symbol        Test Conditions                                      Maximum Ratings            ISOPLUS220 (IXTC)
                                                                                                   E153432
V DSS         TJ = 25



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