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ixth160n10t_ixtq160n10t


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                                      Preliminary Technical Information

TrenchMVTM                                          IXTH160N10T                                 VDSS                = 100 V
Power MOSFET                                        IXTQ160N10T                                 ID25                = 160 A
                                                                                                RDS(on)              7.0 m
N-Channel Enhancement Mode                                                                    TO-247 (IXTH)
Avalanche Rated




Symbol        Test Conditions                                      Maximum Ratings
                                                                                                        G
                                                                                                            D                     (TAB)
V DSS         TJ = 25



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