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bcp68t1


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BCP68T1G

NPN Silicon
Epitaxial Transistor
  This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT- -223 package, which is designed for medium power surface
mount applications.                                                                                      http://onsemi.com

Features
 High Current: IC = 1.0 A                                                              MEDIUM POWER NPN SILICON
 The SOT--223 Package Can Be Soldered Using Wave or Reflow                             HIGH CURRENT TRANSISTOR
 SOT--223 package ensures level mounting, resulting in improved                             SURFACE MOUNT
 thermal conduction, and allows visual inspection of soldered joints.
 The formed leads absorb thermal stress during soldering, eliminating
                                                                                                         COLLECTOR 2,4
 the possibility of damage to the die
 The PNP Complement is BCP69T1
                                                                                                     BASE
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS                                         1
 Compliant
                                                                                                               EMITTER 3

 MAXIMUM RATINGS (TC = 25C unless otherwise noted)
                                                                                                                               MARKING
                     Rating                       Symbol       Value            Unit                                           DIAGRAM
 Collector--Emitter Voltage                       VCEO           20             Vdc
 Collector--Base Voltage                          VCBO           25             Vdc                  4        SOT-
                                                                                                                 -223             AYW
 Emitter--Base Voltage                             VEBO          5.0            Vdc     1                    CASE 318E            CA G
                                                                                            2                 STYLE 1              G
 Collector Current                                  IC           1.0            Adc             3
 Total Power Dissipation @ TA = 25C                 PD           1.5             W
 (Note 1)
 Derate above 25C                                                12         mW/C
                                                                                                    CA   = Specific Device Code
 Operating and Storage Temperature                TJ, Tstg   -- 65 to 150       C
                                                                                                    A    = Assembly Location
 Range
                                                                                                    Y    = Year
 THERMAL CHARACTERISTICS                                                                            W    = Work Week
                                                                                                    G    = Pb--Free Package
                Characteristic                    Symbol        Max             Unit
                                                                                             (Note: Microdot may be in either location)
 Thermal Resistance,                               RJA          83.3            C/W
 Junction--to--Ambient (Surface Mounted)                                                            ORDERING INFORMATION
 Lead Temperature for Soldering,                    TL          260             C
 0.0625 in from case                                                                        Device          Package          Shipping
 Time in Solder Bath                                             10             Sec
                                                                                       BCP68T1G             SOT--223     1000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum                                           (Pb--Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the           BCP68T3G             SOT--223     4000/Tape & Reel
Recommended Operating Conditions may affect device reliability.                                             (Pb--Free)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
   x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.                  For information on tape and reel specifications,
                                                                                       including part orientation and tape sizes, please
                                                                                       refer to our Tape and Reel Packaging Specifications
                                                                                       Brochure, BRD8011/D.




 Semiconductor Components Industries, LLC, 2010                             1                                     Publication Order Number:
September, 2010 - Rev. 6
                -                                                                                                               BCP68T1/D
                                                                        BCP68T1G

       ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
                                       Characteristics                                                                                    Symbol           Min      Typ        Max       Unit
       OFF CHARACTERISTICS
         Collector--Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0)                                                                     V(BR)CES         25         --           --    Vdc
         Collector--Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)                                                                     V(BR)CEO         20         --           --    Vdc
         Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0)                                                                           V(BR)EBO         5.0        --           --    Vdc
         Collector--Base Cutoff Current (VCB = 25 Vdc, IE = 0)                                                                              ICBO            --        --           10    mAdc
         Emitter--Base Cutoff Current (VEB = 5.0 Vdc, IC = 0)                                                                               IEBO            --        --           10    mAdc
       ON CHARACTERISTICS
         DC Current Gain                                                                                                                    hFE                                           --
         (IC = 5.0 mAdc, VCE = 10 Vdc)                                                                                                                     50         --        --
         (IC = 500 mAdc, VCE = 1.0 Vdc)                                                                                                                    85         --       375
         (IC = 1.0 Adc, VCE = 1.0 Vdc)                                                                                                                     60         --        --
         Collector--Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)                                                              VCE(sat)          --        --           0.5   Vdc
         Base--Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)                                                                           VBE(on)           --        --           1.0   Vdc
       DYNAMIC CHARACTERISTICS
         Current--Gain -- Bandwidth Product                                                                                                  fT             --       60            --    MHz
         (IC = 10 mAdc, VCE = 5.0 Vdc)


                                                    TYPICAL ELECTRICAL CHARACTERISTICS
                                                                                   f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)


                                                                                                                               300


                                                                                                                               200
                        300             TJ = 125C
hFE , DC CURRENT GAIN




                        200
                                          = 25C
                        100                                                                                                    100
                                          = -- 55C
                                                                                                                               70             VCE = 10 V
                                                                                                                                              TJ = 25C
                                                                                                                               50             f = 30 MHz
                                                          VCE = 1.0 V

                        10                                                                                                     30
                          1.0         10             100                1000                                                         10                           100     200              1000
                                 IC, COLLECTOR CURRENT (mA)                                                                                           IC, COLLECTOR CURRENT (mA)

                                Figure 1. DC Current Gain                                                                                  Figure 2. Current-Gain-Bandwidth Product




                                                                   http://onsemi.com
                                                                               2
                                                                                                                          BCP68T1G

                                                                                               TYPICAL ELECTRICAL CHARACTERISTICS
                         1.0                                                                                                                                            80
                                   TJ = 25C
                                                                                                                                                                                                                            TJ = 25C
                         0.8             VBE(sat) @ IC/IB = 10                                                                                                          70




                                                                                                                                Cib, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)




                         0.6             VBE(on) @ VCE = 1.0 V                                                                                                          60


                         0.4                                                                                                                                            50


                         0.2                                                                                                                                            40
                                         VCE(sat) @ IC/IB = 10

                          0                                                                                                                                             30
                               1.0             10           100         1000                                                                                                   0         1.0          2.0       3.0        4.0          5.0
                                                IC, COLLECTOR CURRENT (mA)                                                                                                                     VR, REVERSE VOLTAGE (VOLTS)

                                                 Figure 3. "On" Voltage                                                                                                                         Figure 4. Capacitance


                         25                                                                                                                                           -- 0.8

                                                                                                               TJ = 25C         RVB, TEMPERATURE COEFFICIENT (mV/C)
                                                                                                                                                                      --1.2
                         20
C ob, CAPACITANCE (pF)




                                                                                                                                                                      --1.6
                         15                                                                                                                                                                    RVB for VBE

                                                                                                                                                                      -- 2.0

                         10
                                                                                                                                                                      -- 2.4


                         5.0                                                                                                                                          -- 2.8
                               0              5.0                10                                       15               20                                               1.0                     10             100                 1000
                                                VR, REVERSE VOLTAGE (VOLTS)                                                                                                                    IC, COLLECTOR CURRENT (mA)

                                                    Figure 5. Capacitance                                                                                                      Figure 6. Base-Emitter Temperature Coefficient


                                                                                               1.0
                                                                                                                                                                                          TJ = 25C
                                                                 VCE , COLLECTOR VOLTAGE (V)




                                                                                               0.8


                                                                                               0.6                                                                                         = 1000 mA


                                                                                               0.4   I C = 10 mA     = 50 mA                  = 100 mA


                                                                                               0.2
                                                                                                                                                                                         = 500 mA

                                                                                                0
                                                                                                0.01               0.1             1.0                                              10               100
                                                                                                                         IB, BASE CURRENT (mA)

                                                                                                                   Figure 7. Saturation Region




                                                                                                                     http://onsemi.com
                                                                                                                                3
                                                                                     BCP68T1G

                                                                        PACKAGE DIMENSIONS


                                                                               SOT-
                                                                                  -223 (TO--261)
                                                                                CASE 318E--04
                                                                                   ISSUE N


                                          D
                                          b1                                                                      NOTES:
                                                                                                                     1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
                                                                                                                       1994.
                                                                                                                     2. CONTROLLING DIMENSION: INCH.
                                          4                                                                                       MILLIMETERS                 INCHES
                                                                                                                    DIM      MIN      NOM    MAX       MIN      NOM                  MAX
                      HE                                   E                                                         A       1.50     1.63   1.75     0.060     0.064                0.068
                                  1       2      3                                                                  A1       0.02     0.06   0.10     0.001     0.002                0.004
                                                                                                                     b       0.60     0.75   0.89     0.024     0.030                0.035
                                                                                                                    b1       2.90     3.06   3.20     0.115     0.121                0.126
                                                                                                                     c       0.24     0.29   0.35     0.009     0.012                0.014
                                                         b                                                           D       6.30     6.50   6.70     0.249     0.256                0.263
                                                                                                                     E       3.30     3.50   3.70     0.130     0.138                0.145
                      e1                                                                                             e       2.20     2.30   2.40     0.087     0.091                0.094
                                      e                                                                             e1       0.85     0.94   1.05     0.033     0.037                0.041
                                                                                                                     L       0.20     ------  ------  0.008      ------               ------
                                                                                                   C                L1       1.50     1.75   2.00     0.060     0.069                0.078
                                                                                                                    HE       6.70     7.00   7.30     0.264     0.276                0.287
                                                       A                                                                      0         --    10        0          --                 10
        0.08 (0003)                                                                                                STYLE 1:
                               A1                                  L                                                 PIN 1.   BASE
                                                                                              L1
                                                                                                                         2.   COLLECTOR
                                                                                                                         3.   EMITTER
                                                                                                                         4.   COLLECTOR

                                                                        SOLDERING FOOTPRINT*
                                                                                            3.8
                                                                                           0.15

                                                                      2.0
                                                                     0.079




                                                                                                                    6.3
                                                                                   2.3              2.3
                                                                                                                   0.248
                                                                                  0.091            0.091



                                                              2.0
                                                             0.079


                                                                           1.5                      SCALE 6:1       inches
                                                                                                                      mm
                                                                          0.059

                                                  *For additional information on our Pb--Free strategy and soldering
                                                   details, please download the ON Semiconductor Soldering and
                                                   Mounting Techniques Reference Manual, SOLDERRM/D.

 ON Semiconductor and             are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
 to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
 arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
 "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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 Email: [email protected]                                              Phone: 81--3--5773--3850                                         Sales Representative


                                                                                http://onsemi.com                                                                           BCP68T1/D
                                                                                              4



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