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BSP19AT1G

NPN Silicon Expitaxial
Transistor
  This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT-223 package which is designed for
medium power surface mount applications.                                                               http://onsemi.com

Features
                                                                                          SOT--223 PACKAGE
 High Voltage: V(BR)CEO of 250 and 350 V
 The SOT-223 Package Can Be Soldered Using Wave or Reflow                             NPN SILICON HIGH VOLTAGE
 SOT-223 Package Ensures Level Mounting, Resulting in Improved                       TRANSISTOR SURFACE MOUNT
   Thermal Conduction, and Allows Visual Inspection of Soldered Joints
 The Formed Leads Absorb Thermal Stress During Soldering,                                              COLLECTOR 2,4
   Eliminating the Possibility of Damage to the Die
   PNP Complement is BSP16T1                                                                          BASE
   Moisture Sensitivity Level (MSL): 1                                                                  1
   ESD: Human Body Model (HBM) = 4 KV
            Machine Model (MM) = 400 V                                                                       EMITTER 3
   These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
   Compliant                                                                                                           MARKING
                                                                                                         4             DIAGRAM

 MAXIMUM RATINGS (TC = 25C unless otherwise noted)                                                                           4
                                                                                         1                               Collector
                     Rating                       Symbol     Value            Unit            2
                                                                                                  3
 Collector-Emitter Voltage (Open Base)            VCEO         350            Vdc            CASE 318E
                                                                                                                          AYW
 Collector-Base Voltage (Open Emitter)            VCBO         400            Vdc            TO-261AA
                                                                                                                         SP19A G
                                                                                              STYLE 1                       G
 Emitter-Base Voltage (Open Collector)            VEBO         5.0            Vdc
                                                                                                                   1                 3
 Collector Current (DC)                             IC         100            mAdc                              Base                 Emitter
                                                                                                                             2
 THERMAL CHARACTERISTICS                                                                                                 Collector

                Characteristic                    Symbol      Max             Unit           A       = Assembly Location
 Total Power Dissipation @ TA = 25C                PD          0.8             W             Y       = Year
 (Note 1)                                                                                    W       = Work Week
 Derate above 25C                                              6.4        mW/C               SP19A = Specific Device Code
                                                                                             G       = Pb--Free Package
 Thermal Resistance, Junction--to--Ambient         RJA         156            C/W        (Note: Microdot may be in either location)
 Junction and Storage Temperature Range            Tstg    --65 to +150        C
Stresses exceeding Maximum Ratings may damage the device. Maximum                                 ORDERING INFORMATION
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the            Device           Package            Shipping
Recommended Operating Conditions may affect device reliability.                      BSP19AT1G           SOT--223      1000 / Tape & Reel
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
                                                                                                         (Pb--Free)
   recommended footprint.
                                                                                     For information on tape and reel specifications,
                                                                                     including part orientation and tape sizes, please
                                                                                     refer to our Tape and Reel Packaging Specifications
                                                                                     Brochure, BRD8011/D.




 Semiconductor Components Industries, LLC, 2010                           1                                     Publication Order Number:
September, 2010 - Rev. 8
                -                                                                                                            BSP19AT1/D
                                                         BSP19AT1G

 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
                                  Characteristics                           Symbol     Min   Max   Unit
 OFF CHARACTERISTICS
 Collector-Emitter Breakdown Voltage                                        V(BR)CEO               Vdc
      (IC = 1.0 mAdc, IB = 0)                                                          350    --

 Collector-Base Cutoff Current                                                ICBO                 nAdc
      (VCB = 400 Vdc, IE = 0)                                                           --   20

 Emitter-Base Cutoff Current                                                  IEBO                 mAdc
      (VEB = 5.0 Vdc, IC = 0)                                                           --   10

 ON CHARACTERISTICS (Note 2)
 DC Current Gain                                                              hFE                   --
     (IC = 20 mAdc, VCE = 10 Vdc)                                                      40     --

 Current-Gain -- Bandwidth Product                                             fT                  MHz
      (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)                                        70     --

 Collector-Emitter Saturation Voltage                                       VCE(sat)               Vdc
      (IC = 50 mAdc, IB = 4.0 mAdc)                                                     --   0.5

 Base-Emitter Saturation Voltage                                            VBE(sat)               Vdc
     (IC = 50 mAdc, IB = 4.0 mAdc)                                                      --   1.3
2. Pulse Test: Pulse Width  300 ms, Duty Cycle = 2.0%




                                                        http://onsemi.com
                                                                2
                                                                                                   BSP19AT1G

                       1000                                                                                                                                      1.2
                                                                                                                                                                             IC/IB = 10




                                                                                                              VCE(sat), COLLECTOR--EMITTER
                                                                                            VCE = 10 V




                                                                                                                SATURATION VOLTAGE (V)
                                                                                                                                                                   1
hFE, DC CURRENT GAIN


                                                        TJ = 125C
                             100                                                                                                                                 0.8
                                                          TJ = 25C
                                                                                                                                                                 0.6                                                  TJ = 125C
                                                          TJ = --55C

                                     10                                                                                                                          0.4                                            TJ = 25C

                                                                                                                                                                 0.2

                                                                                                                                                                                                                              TJ = -- 55C
                                      1                                                                                                                            0
                                     0.0001            0.001      0.01       0.1                          1                                                       0.0001                       0.001                 0.01               0.1
                                                       IC, COLLECTOR CURRENT (A)                                                                                                      IC, COLLECTOR CURRENT (A)

                                                        Figure 1. DC Current Gain                                                                                              Figure 2. Collector Saturation Voltage




                                                                                                                         VBE(on), BASE--EMITTER ON VOLTAGE (V)
VBE(sat), BASE--EMITTER SATURATION




                                     1.2                                                                                                                         1.2
                                             IC/IB = 10                                                                                                                  VCE = 10 V
                                      1                                                                                                                            1
                                                                       TJ = -- 55C                                                                                                                     TJ = -- 55C
                                     0.8                                                                                                                         0.8
             VOLTAGE (V)




                                     0.6                                    TJ = 25C                                                                             0.6                                          TJ = 25C
                                                                               TJ = 125C
                                     0.4                                                                                                                         0.4                                            TJ = 125C

                                     0.2                                                                                                                         0.2

                                       0                                                                                                                           0
                                      0.0001                   0.001                 0.01                 1                                                       0.0001                      0.001                  0.01                   1
                                                        IC, COLLECTOR CURRENT (A)                                                                                                    IC, COLLECTOR CURRENT (A)

                                                    Figure 3. Base Saturation Voltage                                                                                                 Figure 4. Base ON Voltage




                       10000                                                                                                                                     100
                                                 TJ = 25C                                                                                                                                                                     TJ = 25C
f, CURRENT--GAIN -- BANDWIDTH




                                                 f = 5.0 MHz                                                                                                                                                                  f = 1.0 MHz
                                                 VGS = 10 V                                                                                                                                                                   VCE = 10 V
                                                                                                                                                                                                         CIBO
                                                                                                                                  C, CAPACITANCE (pF)




                            1000
       PRODUCT (MHz)




                                     100                                                                                                                          10
                                                                                                                                                                                                         COBO


                                      10



                                       1                                                                                                                           1
                                           0.1                   1                    10                 100                                                           0.1                1              10                 100        1000
                                                        IC, COLLECTOR CURRENT (mA)                                                                                                   IC, COLLECTOR CURRENT (mA)

                                            Figure 5. Current Gain - Bandwidth Product
                                                                   -                                                                                                                          Figure 6. Capacitance




                                                                                                 http://onsemi.com
                                                                                                                3
                                                                                   BSP19AT1G

                                                                        PACKAGE DIMENSIONS


                                                                               SOT-
                                                                                  -223 (TO--261)
                                                                                CASE 318E--04
                                                                                   ISSUE N


                                          D
                                          b1                                                                      NOTES:
                                                                                                                   1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
                                                                                                                   2. CONTROLLING DIMENSION: INCH.

                                          4                                                                                           MILLIMETERS                       INCHES
                                                                                                                     DIM       MIN        NOM    MAX           MIN        NOM        MAX
                      HE                                   E                                                          A        1.50       1.63   1.75         0.060       0.064      0.068
                                  1       2      3                                                                   A1        0.02       0.06   0.10         0.001       0.002      0.004
                                                                                                                      b        0.60       0.75   0.89         0.024       0.030      0.035
                                                                                                                     b1        2.90       3.06   3.20         0.115       0.121      0.126
                                                                                                                      c        0.24       0.29   0.35         0.009       0.012      0.014
                                                         b                                                            D        6.30       6.50   6.70         0.249       0.256      0.263
                                                                                                                      E        3.30       3.50   3.70         0.130       0.138      0.145
                      e1                                                                                              e        2.20       2.30   2.40         0.087       0.091      0.094
                                      e                                                                              e1        0.85       0.94   1.05         0.033       0.037      0.041
                                                                                                                      L        0.20       ------  ------      0.008        ------     ------
                                                                                                   C                 L1        1.50       1.75   2.00         0.060       0.069      0.078
                                                                                                                     HE        6.70       7.00   7.30         0.264       0.276      0.287
                                                       A                                                                        0           --    10            0            --       10
        0.08 (0003)                                                                                                STYLE 1:
                               A1                                  L                                                 PIN 1.   BASE
                                                                                              L1
                                                                                                                         2.   COLLECTOR
                                                                                                                         3.   EMITTER
                                                                                                                         4.   COLLECTOR

                                                                        SOLDERING FOOTPRINT*
                                                                                            3.8
                                                                                           0.15

                                                                      2.0
                                                                     0.079




                                                                                                                    6.3
                                                                                   2.3              2.3
                                                                                                                   0.248
                                                                                  0.091            0.091



                                                              2.0
                                                             0.079


                                                                           1.5                      SCALE 6:1       inches
                                                                                                                      mm
                                                                          0.059

                                                  *For additional information on our Pb--Free strategy and soldering
                                                   details, please download the ON Semiconductor Soldering and
                                                   Mounting Techniques Reference Manual, SOLDERRM/D.

 ON Semiconductor and             are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
 to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
 arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
 "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
 operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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 Email: [email protected]                                              Phone: 81--3--5773--3850                                          Sales Representative


                                                                                http://onsemi.com                                                                         BSP19AT1/D
                                                                                              4



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