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MMBT4403WT1G
Switching Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1 http://onsemi.com
ESD Rating: Human Body Model; 4 kV,
Machine Model; 400 V
COLLECTOR
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS 3
Compliant
1
BASE
MAXIMUM RATINGS 2
EMITTER
Rating Symbol Value Unit
Collector - Emitter Voltage
- VCEO -
-40 Vdc
Collector - Base Voltage
- VCBO -
-40 Vdc 3
Emitter - Base Voltage
- VEBO -
-5.0 Vdc
1
Collector Current - Continuous
- IC -
-600 mAdc 2
THERMAL CHARACTERISTICS SC- 70
-
CASE 419
Characteristic Symbol Max Unit STYLE 3
Total Device Dissipation FR- Board
-5 PD 150 mW
TA = 25C MARKING DIAGRAM
Thermal Resistance, RJA 833 C/W
Junction- -Ambient
-to-
2T MG
Junction and Storage Temperature TJ, Tstg - 55 to +150
- C G
Stresses exceeding Maximum Ratings may damage the device. Maximum
1
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the 2T = Specific Device Code
Recommended Operating Conditions may affect device reliability.
M = Date Code
G = Pb-
-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBT4403WT1G SC--70 3000 /
(Pb-
-Free) Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 3 MMBT4403WT1/D
MMBT4403WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1) (IC = -
- -1.0 mAdc, IB = 0) V(BR)CEO -
-40 -
- Vdc
Collector - Base Breakdown Voltage (IC = -
- -0.1 mAdc, IE = 0) V(BR)CBO -
-40 -
- Vdc
Emitter - Base Breakdown Voltage (IE = -
- -0.1 mAdc, IC = 0) V(BR)EBO -
-5.0 -
- Vdc
Base Cutoff Current (VCE = -
-35 Vdc, VEB = -
-0.4 Vdc) IBEV -
- -
-0.1 mAdc
Collector Cutoff Current (VCE = -
-35 Vdc, VEB = -
-0.4 Vdc) ICEX -
- -
-0.1 mAdc
ON CHARACTERISTICS
DC Current Gain hFE -
-
(IC = -
-0.1 mAdc, VCE = --1.0 Vdc) 30 -
-
(IC = -
-1.0 mAdc, VCE = --1.0 Vdc) 60 -
-
(IC = -
-10 mAdc, VCE = -
-1.0 Vdc) 100 -
-
(IC = -
-150 mAdc, VCE = - -2.0 Vdc) (Note 1) 100 300
(IC = -
-500 mAdc, VCE = - -2.0 Vdc) (Note 1) 20 -
-
Collector - Emitter Saturation Voltage (Note 1)
- VCE(sat) Vdc
(IC = -
-150 mAdc, IB = --15 mAdc) -
- --0.4
(IC = -
-500 mAdc, IB = --50 mAdc) -
- -
-0.75
Base - Emitter Saturation Voltage (Note 1)
- VBE(sat) Vdc
(IC = --150 mAdc, IB = --15 mAdc) -
-0.75 -
-0.95
(IC = --500 mAdc, IB = --50 mAdc) -
- --1.3
SMALL- SIGNAL CHARACTERISTICS
-
- - -20 mAdc, VCE = -
Current - Gain - Bandwidth Product (IC = - -10 Vdc, f = 100 MHz) fT 200 -
- MHz
Collector-
-Base Capacitance (VCB = -
-10 Vdc, IE = 0, f = 1.0 MHz) Ccb -
- 8.5 pF
Emitter-
-Base Capacitance (VBE = -
-0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb -
- 30 pF
-1.0 mAdc, VCE = -
Input Impedance (IC = - -10 Vdc, f = 1.0 kHz) hie 1.5 15 k
Voltage Feedback Ratio (IC = -
-1.0 mAdc, VCE = -
-10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10-- 4
- -1.0 mAdc, VCE = -
Small - Signal Current Gain (IC = - -10 Vdc, f = 1.0 kHz) hfe 60 500 -
-
-1.0 mAdc, VCE = -
Output Admittance (IC = - -10 Vdc, f = 1.0 kHz) hoe 1.0 100 mmhos
SWITCHING CHARACTERISTICS
Delay Time (VCC = --30 Vdc, VEB = --2.0 Vdc, td -
- 15
ns
Rise Time IC = -
-150 mAdc, IB1 = -
-15 mAdc) tr -
- 20
Storage Time (VCC = - -150 mAdc,
-30 Vdc, IC = - ts -
- 225
ns
Fall Time IB1 = IB2 = -
-15 mAdc) tf -
- 30
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUIT
- 30 V - 30 V
200 200
< 2 ns < 20 ns
+2 V +14 V
0 0
1.0 k 1.0 k CS* < 10 pF
CS* < 10 pF
- 16 V - 16 V
10 to 100 ms, 1.0 to 100 ms,
DUTY CYCLE = 2% DUTY CYCLE = 2% + 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn-
-On Time Figure 2. Turn-
-Off Time
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2
MMBT4403WT1G
TRANSIENT CHARACTERISTICS
25C 100C
30 10
7.0
VCC = 30 V
20 5.0
Ceb IC/IB = 10
3.0
CAPACITANCE (pF)
2.0
Q, CHARGE (nC)
10
1.0
7.0
0.7
Ccb
5.0 0.5
QT
0.3
QA
0.2
2.0 0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances Figure 4. Charge Data
100 100
70 IC/IB = 10 70 VCC = 30 V
50 IC/IB = 10
50
tr @ VCC = 30 V
t r , RISE TIME (ns)
30 tr @ VCC = 10 V 30
t, TIME (ns)
td @ VBE(off) = 2 V
20 td @ VBE(off) = 0 20
10 10
7.0 7.0
5.0 5.0
10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn-
-On Time Figure 6. Rise Time
200
IC/IB = 10
t s, STORAGE TIME (ns)
100
IC/IB = 20
70
50
IB1 = IB2
ts = ts - 1/8 tf
30
20
10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
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MMBT4403WT1G
SMALL-
-SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = --10 Vdc, TA = 25C; Bandwidth = 1.0 Hz
10 10
f = 1 kHz
8 8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
6 IC = 1.0 mA, RS = 430 6 IC = 50 mA
IC = 500 mA, RS = 560
IC = 50 mA, RS = 2.7 k 100 mA
IC = 100 mA, RS = 1.6 k 500 mA
4 4
1.0 mA
2 RS = OPTIMUM SOURCE RESISTANCE 2
0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects Figure 9. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25C
This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain
these curves, a high- gain and a low- gain unit were selected from the MMBT4403LT1 lines, and the same units were used
- -
to develop the correspondingly numbered curves on each graph.
1000 100 k
700 50 k MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
hie , INPUT IMPEDANCE (OHMS)
500
20 k
hfe, CURRENT GAIN
300 10 k
200 5k
2k
MMBT4403LT1 UNIT 1
100 MMBT4403LT1 UNIT 2 1k
70 500
50
200
30 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain Figure 11. Input Impedance
20 500
h re , VOLTAGE FEEDBACK RATIO (X 10- 4 )
hoe , OUTPUT ADMITTANCE (m mhos)
10 MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
5.0 100
50
2.0
20
1.0 MMBT4403LT1 UNIT 1
10 MMBT4403LT1 UNIT 2
0.5
5.0
0.2 2.0
0.1 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance
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MMBT4403WT1G
STATIC CHARACTERISTICS
3.0
VCE = 1.0 V
2.0 VCE = 10 V TJ = 125C
h FE , NORMALIZED CURRENT GAIN
25C
1.0
- 55C
0.7
0.5
0.3
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
IC = 1.0 mA 10 mA 100 mA 500 mA
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
1.0 0.5
TJ = 25C
0
0.8 VBE(sat) @ IC/IB = 10 VC for VCE(sat)
COEFFICIENT (mV/ C)
0.5
VOLTAGE (VOLTS)
0.6 VBE(sat) @ VCE = 10 V
1.0
0.4
1.5
0.2
2.0 VS for VBE
VCE(sat) @ IC/IB = 10
0 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 16. "On" Voltages Figure 17. Temperature Coefficients
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MMBT4403WT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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