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MSD1819A- RT1
-
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general http://onsemi.com
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
COLLECTOR
mount applications. 3
Features
High hFE, 210 - 460
-
Low VCE(sat), < 0.5 V
Moisture Sensitivity Level 1
1 2
ESD Protection: Human Body Model > 4000 V BASE EMITTER
Machine Model > 400 V
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant 3
1
2
MAXIMUM RATINGS (TA = 25C)
Rating Symbol Value Unit
SC-
-70 (SOT--323)
Collector-Base Voltage V(BR)CBO 60 Vdc CASE 419
STYLE 3
Collector-Emitter Voltage V(BR)CEO 50 Vdc
Emitter-Base Voltage V(BR)EBO 7.0 Vdc
MARKING DIAGRAM
Collector Current -- Continuous IC 100 mAdc
Collector Current -- Peak IC(P) 200 mAdc
THERMAL CHARACTERISTICS ZR M G
Characteristic Symbol Max Unit G
Power Dissipation (Note 1) PD 150 mW 1
Junction Temperature TJ 150 C
ZR = Device Code
Storage Temperature Range Tstg --55 to +150 C
M = Date Code*
Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb--Free Package
Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location)
Operating Conditions is not implied. Extended exposure to stresses above the *Date Code orientation may vary depending
Recommended Operating Conditions may affect device reliability. upon manufacturing location.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
ORDERING INFORMATION
Device Package Shipping
MSD1819A--RT1G SC--70/ 3000/Tape & Reel
SOT--323
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 7
- MSD1819A- -RT1/D
MSD1819A-
-RT1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 -- Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 -- Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0) V(BR)EBO 7.0 -- Vdc
Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO -- 0.1 mA
Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) ICEO -- 0.1 mA
DC Current Gain (Note 2) --
(VCE = 10 Vdc, IC = 2.0 mAdc) hFE1 210 340
(VCE = 2.0 Vdc, IC = 100 mAdc) hFE2 90 --
Collector-Emitter Saturation Voltage (Note 2) VCE(sat) -- 0.5 Vdc
(IC = 100 mAdc, IB = 10 mAdc)
2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
250 0.30
IC/IB = 10
VCE(sat), COLLECTOR--EMITTER
PD, POWER DISSIPATION (mW)
0.25
SATURATION VOLTAGE (V)
200
0.20
150
150C
0.15
100
0.10 25C
--55C
50 RJA = 833C/W
0.05
0 0
--50 0 50 100 150 0.0001 0.001 0.01 0.1 1
TA, AMBIENT TEMPERATURE (C) IC, COLLECTOR CURRENT (A)
Figure 1. Derating Curve Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
450
150C (10 V) 0.95 IC/IB = 10 --55C
VBE(sat), BASE--EMITTER SATURA-
400
150C (2 V) 0.85
hFE, DC CURRENT GAIN
350
25C
TION VOLTAGE (V)
300 25C (10 V) 0.75
250 0.65
25C (2 V)
150C
200
--55C (10 V) 0.55
150
--55C (2 V) 0.45
100
50 0.35
0 0.25
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs.
Current Collector Current
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2
MSD1819A-
-RT1
VBE(on), BASE--EMITTER TURN ON VOLTAGE (V)
VCE, COLLECTOR--EMITTER VOLTAGE (V)
1.0 1.2
1 mA TA = 25C
0.9
--55C 1.0
0.8 10 mA 50 mA IC = 100 mA
0.8
0.7 25C
0.6 0.6
0.5
150C 0.4
0.4
0.2
0.3
500 mA
0.2 0
0.0001 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A)
Figure 5. Base Emitter Turn--On Voltage vs. Figure 6. Collector Saturation Region
Collector Current
18 6.0
Cobo, OUTPUT CAPACITANCE (pF)
17 5.5
Cibo, INPUT CAPACITANCE (pF)
16 5.0
15
4.5
14
4.0
13 Cibo (pF)
3.5 Cobo (pF)
12
3.0
11
10 2.5
9 2.0
8 1.5
7 1.0
0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40
Veb, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance Figure 8. Output Capacitance
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MSD1819A-
-RT1
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800--282--9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81--3--5773--3850 Sales Representative
http://onsemi.com MSD1819A-
-RT1/D
4
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