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MUN5211T1G Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base- -emitter
resistor. The BRT eliminates these individual components by
NPN SILICON
integrating them into a single device. The use of a BRT can reduce BIAS RESISTOR
both system cost and board space. The device is housed in the TRANSISTORS
SC- -70/SOT- -323 package which is designed for low power
surface mount applications.
PIN 3
Features COLLECTOR
PIN 1
Simplifies Circuit Design
BASE
R1 (OUTPUT)
Reduces Board Space (INPUT) R2
Reduces Component Count PIN 2
EMITTER
The SC- -70/SOT- -323 package can be soldered using wave or reflow. (GROUND)
The modified gull- -winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number 3
to order the 7 inch/3000 unit reel. SC-
-70/SOT--323
CASE 419
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 1 STYLE 3
Compliant 2
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
MARKING DIAGRAM
Rating Symbol Value Unit
Collector--Base Voltage VCBO 50 Vdc
Collector--Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc 8x M G
G
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation PD 202 (Note 1) mW
TA = 25C 310 (Note 2) 8x = Device Code
Derate above 25C 1.6 (Note 1) mW/C M = Date Code*
2.5 (Note 2) G = Pb--Free Package
Thermal Resistance, Junction--to--Ambient RJA 618 (Note 1) C/W (Note: Microdot may be in either location)
403 (Note 2) *Date Code orientation may vary depending
upon manufacturing location.
Thermal Resistance, Junction--to--Lead RJL 280 (Note 1) C/W
332 (Note 2)
ORDERING INFORMATION
Junction and Storage Temperature TJ, Tstg -- 55 to +150 C See detailed ordering and shipping information in the package
Range dimensions section on page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
DEVICE MARKING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the
See specific marking information in the device marking table
Recommended Operating Conditions may affect device reliability.
on page 2 of this data sheet.
1. FR--4 @ Minimum Pad.
2. FR--4 @ 1.0 x 1.0 inch Pad.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 9
- MUN5211T1/D
MUN5211T1G Series
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5211T1G SC--70/SOT--323 8A 10 10 3000 / Tape & Reel
(Pb--Free)
MUN5212T1G SC--70/SOT--323 8B 22 22 3000 / Tape & Reel
(Pb--Free)
MUN5213T1G SC--70/SOT--323 8C 47 47 3000 / Tape & Reel
(Pb--Free)
MUN5214T1G SC--70/SOT--323 8D 10 47 3000 / Tape & Reel
(Pb--Free)
MUN5215T1G SC--70/SOT--323 8E 10 3000 / Tape & Reel
(Pb--Free)
MUN5216T1G (Note 3) SC--70/SOT--323 8F 4.7 3000 / Tape & Reel
(Pb--Free)
MUN5230T1G SC--70/SOT--323 8G 1.0 1.0 3000 / Tape & Reel
(Pb--Free)
MUN5231T1G (Note 3) SC--70/SOT--323 8H 2.2 2.2 3000 / Tape & Reel
(Pb--Free)
MUN5232T1G SC--70/SOT--323 8J 4.7 4.7 3000 / Tape & Reel
(Pb--Free)
MUN5233T1G SC--70/SOT--323 8K 4.7 47 3000 / Tape & Reel
(Pb--Free)
MUN5234T1G (Note 3) SC--70/SOT--323 8L 22 47 3000 / Tape & Reel
(Pb--Free)
MUN5235T1G SC--70/SOT--323 8M 2.2 47 3000 / Tape & Reel
(Pb--Free)
MUN5236T1G (Note 3) SC--70/SOT--323 8N 100 100 3000 / Tape & Reel
(Pb--Free)
MUN5237T1G (Note 3) SC--70/SOT--323 8P 47 22 3000 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
2
MUN5211T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector--Base Cutoff Current ICBO -- -- 100 nAdc
(VCB = 50 V, IE = 0)
Collector--Emitter Cutoff Current ICEO -- -- 500 nAdc
(VCE = 50 V, IB = 0)
Emitter--Base Cutoff Current MUN5211T1G IEBO -- -- 0.5 mAdc
(VEB = 6.0 V, IC = 0) MUN5212T1G -- -- 0.2
MUN5213T1G -- -- 0.1
MUN5214T1G -- -- 0.2
MUN5215T1G -- -- 0.9
MUN5216T1G -- -- 1.9
MUN5230T1G -- -- 4.3
MUN5231T1G -- -- 2.3
MUN5232T1G -- -- 1.5
MUN5233T1G -- -- 0.18
MUN5234T1G -- -- 0.13
MUN5235T1G -- -- 0.2
MUN5236T1G -- -- 0.05
MUN5237T1G -- -- 0.13
Collector--Base Breakdown Voltage V(BR)CBO 50 -- -- Vdc
(IC = 10 mA, IE = 0)
Collector--Emitter Breakdown Voltage (Note 4) V(BR)CEO 50 -- -- Vdc
(IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN5211T1G hFE 35 60 --
(VCE = 10 V, IC = 5.0 mA) MUN5212T1G 60 100 --
MUN5213T1G 80 140 --
MUN5214T1G 80 140 --
MUN5215T1G 160 350 --
MUN5216T1G 160 350 --
MUN5230T1G 3.0 5.0 --
MUN5231T1G 8.0 15 --
MUN5232T1G 15 30 --
MUN5233T1G 80 200 --
MUN5234T1G 80 150 --
MUN5235T1G 80 140 --
MUN5236T1G 80 150 --
MUN5237T1G 80 140 --
Collector--Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mA, IB = 0.3 mA) MUN5211T1G -- -- 0.25
MUN5212T1G -- -- 0.25
MUN5213T1G -- -- 0.25
MUN5214T1G -- -- 0.25
MUN5236T1G -- -- 0.25
(IC = 10 mA, IB = 5 mA) MUN5230T1G -- -- 0.25
MUN5231T1G -- -- 0.25
MUN5237T1G -- -- 0.25
(IC = 10 mA, IB = 1 mA) MUN5215T1G -- -- 0.25
MUN5216T1G -- -- 0.25
MUN5232T1G -- -- 0.25
MUN5233T1G -- -- 0.25
MUN5234T1G -- -- 0.25
MUN5235T1G -- -- 0.25
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
MUN5211T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on) VOL Vdc
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211T1G -- -- 0.2
MUN5212T1G -- -- 0.2
MUN5214T1G -- -- 0.2
MUN5215T1G -- -- 0.2
MUN5216T1G -- -- 0.2
MUN5230T1G -- -- 0.2
MUN5231T1G -- -- 0.2
MUN5232T1G -- -- 0.2
MUN5233T1G -- -- 0.2
MUN5234T1G -- -- 0.2
MUN5235T1G -- -- 0.2
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5213T1G -- -- 0.2
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) MUN5236T1G -- -- 0.2
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) MUN5237T1G -- -- 0.2
Output Voltage (off) VOH Vdc
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) MUN5211T1G 4.9 -- --
MUN5212T1G 4.9 -- --
MUN5213T1G 4.9 -- --
MUN5214T1G 4.9 -- --
MUN5234T1G 4.9 -- --
MUN5235T1G 4.9 -- --
(VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) MUN5230T1G 4.9 -- --
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215T1G 4.9 -- --
MUN5216T1G 4.9 -- --
MUN5231T1G 4.9 -- --
MUN5232T1G 4.9 -- --
MUN5233T1G 4.9 -- --
MUN5236T1G 4.9 -- --
MUN5237T1G 4.9 -- --
Input Resistor R1 k
MUN5211T1G 7.0 10 13
MUN5212T1G 15.4 22 28.6
MUN5213T1G 32.9 47 61.1
MUN5214T1G 7.0 10 13
MUN5215T1G 7.0 10 13
MUN5216T1G 3.3 4.7 6.1
MUN5230T1G 0.7 1.0 1.3
MUN5231T1G 1.5 2.2 2.9
MUN5232T1G 3.3 4.7 6.1
MUN5233T1G 3.3 4.7 6.1
MUN5234T1G 15.4 22 28.6
MUN5235T1G 1.54 2.2 2.86
MUN5236T1G 70 100 130
MUN5237T1G 32.9 47 61.1
Resistor Ratio R1/R2
MUN5211T1G 0.8 1.0 1.2
MUN5212T1G 0.8 1.0 1.2
MUN5213T1G 0.8 1.0 1.2
MUN5214T1G 0.17 0.21 0.25
MUN5215T1G -- -- --
MUN5216T1G -- -- --
MUN5230T1G 0.8 1.0 1.2
MUN5231T1G 0.8 1.0 1.2
MUN5232T1G 0.8 1.0 1.2
MUN5233T1G 0.055 0.1 0.185
MUN5234T1G 0.38 0.47 0.56
MUN5235T1G 0.038 0.047 0.056
MUN5236T1G 0.8 1.0 1.2
MUN5237T1G 1.7 2.1 2.6
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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4
MUN5211T1G Series
350
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50 RJA = 403C/W
0
-- 50 0 50 100 150
TA, AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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5
MUN5211T1G Series
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS - MUN5211T1G
-
1 1000
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10 TA = --25C VCE = 10 V
25C
TA = 75C
0.1 25C
--25C
75C
100
0.01
0.001 10
0 20 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain
4 100
25C
f = 1 MHz 75C
IE = 0 V 10 TA = --25C
IC, COLLECTOR CURRENT (mA)
3 TA = 25C
C ob , CAPACITANCE (pF)
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V TA = --25C
25C
V in , INPUT VOLTAGE (VOLTS)
75C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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6
MUN5211T1G Series
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS - MUN5212T1G
-
1 1000
VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 10
TA = 75C
25C 25C
TA = --25C
0.1
75C --25C
100
0.01
0.001 10
0 20 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain
4 100 75C 25C
f = 1 MHz
TA = --25C
IE = 0 V 10
IC, COLLECTOR CURRENT (mA)
3 TA = 25C
C ob , CAPACITANCE (pF)
1
2
0.1
1
0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = --25C
V in , INPUT VOLTAGE (VOLTS)
10
75C 25C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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7
MUN5211T1G Series
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS - MUN5213T1G
-
10 1000
IC/IB = 10 VCE = 10 V
hFE , DC CURRENT GAIN (NORMALIZED)
TA = 75C
1 25C
--25C
TA = --25C 25C 100
0.1 75C
0.01 10
0 20 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain
1 100
f = 1 MHz 25C
75C
IE = 0 V
0.8 TA = 25C 10 TA = --25C
IC, COLLECTOR CURRENT (mA)
C ob , CAPACITANCE (pF)
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50 0 2 4 6 8 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
TA = --25C 25C
V in , INPUT VOLTAGE (VOLTS)
10 75C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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8
MUN5211T1G Series
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS - MUN5214T1G
-
1 300
IC/IB = 10 VCE = 10 TA = 75C
hFE , DC CURRENT GAIN (NORMALIZED)
TA = --25C 250
25C 25C
0.1 200
75C --25C
150
0.01 100
50
0.001 0
0 20 40 60 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain
4 100
3.5 f = 1 MHz TA = 75C 25C
lE = 0 V
3 TA = 25C
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
2.5 --25C
2 10
1.5
1
0.5 VO = 5 V
0 1
0 2 4 6 8 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
10
VO = 0.2 V TA = --25C
25C
V in , INPUT VOLTAGE (VOLTS)
75C
1
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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9
MUN5211T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5215T1G
1 1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10 VCE = 10 V
75C
hFE, DC CURRENT GAIN
75C TA = --25C
0.1 100
25C
--25C
25C
0.01 10
0.001 1
0 10 20 30 40 50 1 10 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain
4.5 100
75C
IC, COLLECTOR CURRENT (mA)
4 f = 1 MHz
IE = 0 V 10
Cob, CAPACITANCE (pF)
3.5 25C
TA = 25C
3
1
2.5
2 TA = --25C
0.1
1.5
1 0.01
VO = 5 V
0.5
0 0.001
0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
TA = --25C
1
25C
75C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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10
MUN5211T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5230T1G
1 100
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
IC/IB = 10
hFE, DC CURRENT GAIN
75C
0.1
--25C 75C
25C 10
25C
0.01 TA = --25C
VCE = 10 V
0.001 1
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