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NIMD6302R2
HDPlus Dual N-Channel
Self-protected Field Effect
Transistors with 1:200
Current Mirror FET
HDPlus devices are an advanced series of power MOSFET which http://onsemi.com
utilize ON Semiconductor's latest MOSFET technology process to
achieve the lowest possible on-resistance per silicon area while 5.0 AMPERES
incorporating smart features. They are capable of withstanding high
energy in the avalanche and commutation modes. The avalanche 30 VOLTS
energy is specified to eliminate guesswork in designs where inductive RDS(on) = 50 mW
loads are switched and offer additional safety margin against
unexpected voltage transients. ISOLATED DUAL PACKAGING
This HDPlus device features an integrated Gate-to-Source clamp Drain1 Drain2
for ESD protection. Also, this device features a mirror FET for current
monitoring.
Gate1 Mirror Main Gate2 Mirror Main
Features FET FET
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