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NIF5002N
                                   Preferred Device

Self-Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N-Channel, SOT-223
                                                                                                          http://onsemi.com
  HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process                         V(BR)DSS
                                                                                        (Clamped)              RDS(ON) TYP              ID MAX
to achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits                        42 V               165 mW @ 10 V             2.0 A*
work together to provide short circuit protection. The devices feature                *Max current limit value is dependent on input
an integrated Drain-to-Gate Clamp that enables them to withstand                       condition.
high energy in the avalanche mode. The Clamp also provides
                                                                                                                                      Drain
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp.                                                                                          Overvoltage                    MPWR
                                                                                      Gate                      Protection
                                                                                      Input           RG
Features

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