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NTD5865NL
N- Channel Power MOSFET
-
60 V, 40 A, 16 m
Features
Low Gate Charge
Fast Switching
http://onsemi.com
High Current Capability
100% Avalanche Tested
These Devices are Pb-
-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX
16 m @ 10 V
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 60 V 40 A
19 m @ 4.5 V
Parameter Symbol Value Unit
Drain--to--Source Voltage VDSS 60 V
D
Gate--to--Source Voltage -- Continuous VGS 20 V
Gate--to--Source Voltage VGS 30 V
-- Non--Repetitive (tp < 10 ms)
Continuous Drain TC = 25C ID 40 A
Current (RJC) G
Steady TC = 100C 26
State
Power Dissipation TC = 25C PD 52 W
(RJC) S
N-
-CHANNEL MOSFET
Pulsed Drain Current tp = 10 ms IDM 137 A
Operating Junction and Storage Temperature TJ, Tstg -- 55 to C 4
150
4
Source Current (Body Diode) IS 40 A
Single Pulse Drain--to--Source (L = EAS 36 mJ 1 2
Avalanche Energy 0.1 mH) 3 1
IAS 27 A 2
DPAK 3
Lead Temperature for Soldering Purposes TL 260 C CASE 369AA IPAK
(1/8 from case for 10 s) CASE 369D
(Surface Mount)
Stresses exceeding Maximum Ratings may damage the device. Maximum STYLE 2 (Straight Lead)
Ratings are stress ratings only. Functional operation above the Recommended STYLE 2
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
THERMAL RESISTANCE MAXIMUM RATINGS & PIN ASSIGNMENT
4
Parameter Symbol Value Unit 4 Drain
Drain
Junction--to--Case (Drain) RJC 2.4 C/W
65NLG
YWW
Junction--to--Ambient -- Steady State (Note 1) RJA 42
65NLG
58
YWW
1. Surface--mounted on FR4 board using 1 in sq pad size
58
(Cu area = 1.127 in sq [2 oz] including traces.
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
Y = Year
WW = Work Week
5865NL = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
June, 2010 - Rev. 1
- NTD5865NL/D
NTD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain--to--Source Breakdown Voltage V(BR)DSS/TJ 55 mV/C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25C 1.0 mA
VDS = 60 V TJ = 150C 100
Gate--to--Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.0 V
Negative Threshold Temperature VGS(TH)/TJ 5.6 mV/C
Coefficient
Drain--to--Source On Resistance RDS(on) VGS = 10 V, ID = 20 A 13 16 m
Drain--to--Source on Resistance RDS(on) VGS = 4.5 V, ID = 20 A 16 19 m
Forward Transconductance gFS VDS = 15 V, ID = 20 A 15 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance Ciss 1400 pF
VGS = 0 V, f = 1.0 MHz,
Output Capacitance Coss 137
VDS = 25 V
Reverse Transfer Capacitance Crss 95
Total Gate Charge QG(TOT) 29 nC
Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 48 V, 1.1
Gate--to--Source Charge QGS ID = 40 A 4
Gate--to--Drain Charge QGD 8
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 48 V, 15 nC
ID = 40 A
Gate Resistance RG 1.3
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time td(on) 8.4 ns
Rise Time tr VGS = 10 V, VDD = 48 V, 12.4
Turn--Off Delay Time td(off) ID = 40 A, RG = 2.5 26
Fall Time tf 4.4
DRAIN-
-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25C 0.95 1.2 V
IS = 40 A TJ = 125C 0.85
Reverse Recovery Time tRR 20 ns
Charge Time ta VGS = 0 V, dIs/dt = 100 A/ms, 13
Discharge Time tb IS = 40 A 7
Reverse Recovery Charge QRR 13 nC
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number Package Shipping
NTD5865NL--1G IPAK (Straight Lead) 75 Units / Rail
(Pb--Free)
NTD5865NLT4G DPAK 2500 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5865NL
TYPICAL CHARACTERISTICS
80 80
VGS = 10 V 4V VDS 10 V
70 3.8 V TJ = 25C 70
4.5 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60 60
3.6 V
50 50
3.4 V
40 40
3.2 V
30 30 TJ = 25C
20 3V 20
10 2.8 V 10 TJ = 125C
TJ = --55C
2.6 V
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS, DRAIN--TO--SOURCE VOLTAGE (V) VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 1. On-
-Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN--TO--SOURCE RESISTANCE ()
RDS(on), DRAIN--TO--SOURCE RESISTANCE ()
0.030 0.018
ID = 40 A TJ = 25C
TJ = 25C VGS = 4.5 V
0.025 0.016
0.020 0.014
VGS = 10 V
0.015 0.012
0.010 0.010
2 3 4 5 6 7 8 9 10 5 10 15 20 25 30 35 40
VGS, GATE--TO--SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On-
-Resistance vs. Gate Voltage Figure 4. On-
-Resistance vs. Drain Current
RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED)
2.0 10000
ID = 40 A VGS = 0 V
1.8 VGS = 10 V
TJ = 150C
1.6
IDSS, LEAKAGE (mA)
1.4
1000
1.2 TJ = 125C
1.0
0.8
0.6 100
--50 --25 0 25 50 75 100 125 150 10 20 30 40 50 60
TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 5. On-
-Resistance Variation with Figure 6. Drain- -Source Leakage Current
-to-
Temperature vs. Voltage
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3
NTD5865NL
TYPICAL CHARACTERISTICS
1800 10
VGS = 0 V QT
VGS, GATE--TO--SOURCE VOLTAGE (V)
1600
TJ = 25C
1400 Ciss 8
C, CAPACITANCE (pF)
1200
6
1000
800
4 Qgs
Qgd
600
400 2 VDS = 48 V
200 Coss ID = 40 A
Crss TJ = 25C
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
VDS, DRAIN--TO--SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate- -Source vs. Total Charge
-to-
1000 40
VDD = 48 V VGS = 0 V
35
ID = 40 A TJ = 25C
IS, SOURCE CURRENT (A)
VGS = 10 V 30
100
25
t, TIME (ns)
td(off) 20
tr td(on) 15
10
tf 10
5
1 0
1 10 100 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
RG, GATE RESISTANCE () VSD, SOURCE--TO--DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 40
VGS = 10 V ID = 27 A
SINGLE PULSE 35
AVALANCHE ENERGY (mJ)
TC = 25C 100 ms
ID, DRAIN CURRENT (A)
100 30
10 ms 1 ms 10 ms
25
10 20
dc 15
1 10
RDS(on) LIMIT
THERMAL LIMIT 5
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN--TO--SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
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4
NTD5865NL
TYPICAL CHARACTERISTICS
10
RJC(t) (C/W) EFFECTIVE TRANSIENT
Duty Cycle = 0.5
THERMAL RESISTANCE
1
0.2
0.1
0.05
0.02
0.1
0.01
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE A
NOTES:
- -
-T- SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.025 0.035 0.63 0.89
A E 0.018 0.024 0.46 0.61
S H F 0.030 0.045 0.77 1.14
1 2 3 H 0.386 0.410 9.80 10.40
U J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
F J U 0.020 ------ 0.51 ------
L V 0.035 0.050 0.89 1.27
Z 0.155 ------ 3.93 ------
D 2 PL STYLE 2:
PIN 1. GATE
0.13 (0.005) M T 2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20 3.0
0.244 0.118
2.58
0.101
5.80 1.6 6.172
0.228 0.063 0.243
SCALE 3:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD5865NL
PACKAGE DIMENSIONS
IPAK
CASE 369D--01
ISSUE B
B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
- -
-T- F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 ------ 3.93 ------
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
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or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800--282--9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81--3--5773--3850 Sales Representative
http://onsemi.com NTD5865NL/D
7
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