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NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
Level-Shift, P-Channel SC-88
   The NTJD1155L integrates a P and N-Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high                                http://onsemi.com
load currents are needed. The P-Channel device is specifically
designed as a load switch using ON Semiconductor state-of-the-art                   V(BR)DSS         RDS(on) TYP                  ID MAX
trench technology. The N-Channel, with an external resistor (R1),
                                                                                                   130 mW @ -4.5 V
functions as a level-shift to drive the P-Channel. The N-Channel
MOSFET has internal ESD protection and can be driven by logic                         8.0 V        170 mW @ -2.5 V                

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