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PZT651T1G
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in
industrial and consumer applications. The device is housed in the
SOT- -223 package which is designed for medium power surface
mount applications. http://onsemi.com
SOT- -223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints. SOT-
-223 PACKAGE HIGH CURRENT
The formed leads absorb thermal stress during soldering, eliminating NPN SILICON TRANSISTOR
the possibility of damage to the die. SURFACE MOUNT
Features
High Current: 2.0 A COLLECTOR 2,4
The SOT--223 package can be soldered using wave or reflow
Available in 12 mm Tape and Reel BASE
Use PZT651T1 to order the 7 inch/1000 unit reel 1
Use PZT651T3 to order the 13 inch/4000 unit reel
PNP Complement is PZT751T1 EMITTER 3
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant MARKING
DIAGRAM
4 AYW
MAXIMUM RATINGS (TC = 25C unless otherwise noted) TO--261AA
CASE 318E-
-04 651 G
1
Rating Symbol Value Unit 2 STYLE 1 G
3
1
Collector--Emitter Voltage VCEO 60 Vdc
Collector--Base Voltage VCBO 80 Vdc
Emitter--Base Voltage VEBO 5.0 Vdc
A = Assembly Location
Collector Current IC 2.0 Adc Y = Year
WW = Work Week
Total Power Dissipation @ TA = 25C PD 0.8 W
G = Pb--Free Package
(Note 1)
(Note: Microdot may be in either location)
Derate above 25C 6.4 mW/C
Storage Temperature Range Tstg -- 65 to 150 C
Junction Temperature TJ 150 C
ORDERING INFORMATION
THERMAL CHARACTERISTICS See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Characteristic Symbol Max Unit
Thermal Resistance from RJA 156 C/W
Junction--to--Ambient in Free Air
Maximum Temperature for Soldering TL 260 C
Purposes
Time in Solder Bath 10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR--4 glass epoxy printed circuit board using minimum
recommended footprint.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 7
- PZT651T1/D
PZT651T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage V(BR)CEO 60 -- Vdc
(IC = 10 mAdc, IB = 0)
Collector--Emitter Breakdown Voltage V(BR)CBO 80 -- Vdc
(IC = 100 mAdc, IE = 0)
Emitter--Base Breakdown Voltage V(BR)EBO 5.0 -- Vdc
(IE = 10 mAdc, IC = 0)
Base--Emitter Cutoff Current IEBO -- 0.1 mAdc
(VEB = 4.0 Vdc)
Collector--Base Cutoff Current ICBO -- 100 nAdc
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE --
(IC = 50 mAdc, VCE = 2.0 Vdc) 75 --
(IC = 500 mAdc, VCE = 2.0 Vdc) 75 --
(IC = 1.0 Adc, VCE = 2.0 Vdc) 75 --
(IC = 2.0 Adc, VCE = 2.0 Vdc) 40 --
Collector--Emitter Saturation Voltages VCE(sat) Vdc
(IC = 2.0 Adc, IB = 200 mAdc) -- 0.5
(IC = 1.0 Adc, IB = 100 mAdc) -- 0.3
Base--Emitter Voltages VBE(on) -- 1.0 Vdc
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Base--Emitter Saturation Voltage VBE(sat) -- 1.2 Vdc
(IC = 1.0 Adc, IB = 100 mAdc)
Current--Gain -- Bandwidth fT 75 -- MHz
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%
ORDERING INFORMATION
Device Package Shipping
PZT651T1G SOT--223 1000 / Tape and Reel
(Pb--Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
PZT651T1G
NPN PNP
300 250
TJ = 125C
270 VCE = 2.0 V 225 VCE = --2.0 V
240 TJ = 125C 200
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
210 175
25C
180 150
25C
150 125
120 100
-- 55C -- 55C
90 75
60 50
30 25
0 0
10 20 50 100 200 500 1.0 A 2.0 A 4.0 A --10 -- 20 -- 50 --100 -- 200 -- 500 --1.0 A --2.0 A --4.0 A
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 1. Typical DC Current Gain Figure 2. Typical DC Current Gain
NPN PNP
2.0 --2.0
1.8 --1.8
1.6 --1.6
1.4
V, VOLTAGE (VOLTS)
--1.4
V, VOLTAGE (VOLTS)
1.2 --1.2
1.0 VBE(sat) @ IC/IB = 10 --1.0 VBE(sat) @ IC/IB = 10
0.8 --0.8
VBE(on) @ VCE = 2.0 V VBE(on) @ VCE = 2.0 V
0.6 --0.6
0.4 --0.4
0.2 VCE(sat) @ IC/IB = 10 --0.2 VCE(sat) @ IC/IB = 10
0 0
50 100 200 500 1.0 A 2.0 A 4.0 A --50 --100 --200 --500 --1.0 A --2.0 A --4.0 A
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. On Voltages Figure 4. On Voltages
NPN PNP
1.0 --1.0
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
0.9 --0.9
0.8 TJ = 25C --0.8 TJ = 25C
0.7 --0.7
0.6 --0.6
0.5 --0.5
0.4 --0.4
IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A IC = --500 mA IC = --2.0 A
0.3 --0.3
0.2 --0.2
IC = --10 mA IC = --100 mA
0.1 --0.1
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 --0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --500
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region Figure 6. Collector Saturation Region
http://onsemi.com
3
PZT651T1G
PACKAGE DIMENSIONS
SOT-
-223 (TO--261)
CASE 318E--04
D ISSUE N
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1 2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800--282--9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: [email protected] Phone: 81--3--5773--3850 Sales Representative
http://onsemi.com PZT651T1/D
4
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