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                                                                                                M8050(NPN)
                                                                                                 TO-92 Transistors

                                                                                                         TO-92
                                                                 1.     EMITTER

                                                                  2.    BASE

                                                                  3. COLLECTOR




Features
        Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                   Parameter                 Value              Units
VCBO           Collector-Base Voltage                    40             V
VCEO           Collector-Emitter Voltage                 25             V
VEBO           Emitter-Base Voltage                      6              V
IC             Collector Current -Continuous             800           mA
PC             Collector Power Dissipation               625           mW                Dimensions in inches and (millimeters)
TJ             Junction Temperature                      125            
Tstg           Storage Temperature                 -55-125              


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                       Symbol           Test       conditions         MIN        MAX        UNIT

     Collector-base breakdown voltage          V(BR)CBO        IC= 100A,IE=0                     40                    V
     Collector-emitter breakdown voltage       V(BR)CEO*       IC= 1mA, IB=0                     25                    V
     Emitter-base breakdown voltage            V(BR)EBO        IE= 100A, IC=0                     6                    V
     Collector cut-off current                    ICBO         VCB= 35V, IE=0                               0.1        A
     Collector cut-off   current                  ICEO         VCE= 20V, IB=0                               0.1        A
                                                 hFE(1)        VCE=1V, IC=5mA                    45
     DC current gain                             hFE(2)        VCE=1V, IC=100mA                  80        400
                                                 hFE(3)        VCE=1V, IC=800mA                  40
     Collector-emitter saturation voltage        VCE(sat)      IC= 800mA, IB=80mA                           0.5        V
     Base-emitter saturation voltage             VBE(sat)      IC=800mA, IB= 80mA                           1.2        V
     Transition frequency                           fT         VCE=6V, IC= 20mA , f=30MHz        150                  MHz
 * Pulse Test : pulse width  300

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