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                                                                                                      M8550
                                                                                           SOT-23 Transistor(PNP)


                                             1. BASE                                                  SOT-23
                                             2. EMITTER
                                             3. COLLECTOR



Features
         Power dissipation


MARKING: Y21

MAXIMUM RATINGS (TA=25 unless otherwise noted)
    Symbol               Parameter                     Value       Units
VCBO           Collector-Base Voltage                    -40         V
                                                                                        Dimensions in inches and (millimeters)
VCEO           Collector-Emitter Voltage                 -25         V
VEBO           Emitter-Base Voltage                       -6         V
IC             Collector Current -Continuous              -0.8      A
PC             Collector power dissipation              200         mW
Tj             Junction Temperature                     150          
Tstg           Storage Temperature                     -55-150       
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                          Symbol           Test    conditions          MIN          MAX    UNIT
     Collector-base breakdown voltage            V(BR)CBO        IC= -100A , IE=0               -40                  V
     Collector-emitter breakdown voltage         V(BR)CEO*       IC= -1mA , IB=0                -25                  V
     Emitter-base breakdown voltage              V(BR)EBO        IE= -100A,    IC=0              -6                  V
     Collector cut-off current                         ICBO      VCB= -35V ,   IE=0                         -0.1    A
     Collector cut-off current                         ICEO      VCE= -20V ,   IB=0                         -0.1    A
                                                    hFE(1)       VCE=-1V, IC=-5mA                45
     DC current gain                                hFE(2)       VCE=-1V, IC=-100mA              85         300
                                                    hFE(3)       VCE=-1V, IC=-800mA              40
     Collector-emitter saturation voltage          VCE(sat)      IC= -800mA, IB=-80mA                       -0.5     V
     Base-emitter saturation voltage               VBE(sat)      IC=-800mA, IB=-80mA                        -1.2     V
                                                                 VCE=-6V, IC= -20mA
     Transition frequency                              fT                                       150                MHz
                                                                 f=30MHz


*      Pulse Test :pulse width  300

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