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                                                                                         M8550(PNP)
                                                                                         TO-92 Transistors

                                                                                                 TO-92
                                                             1.   EMITTER

                                                             2.   BASE

                                                             3. COLLECTOR



Features
       Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                 Parameter             Value      Units
VCBO        Collector-Base Voltage            -40        V
VCEO        Collector-Emitter Voltage         -25        V
VEBO        Emitter-Base Voltage              -6         V
IC          Collector Current -Continuous    -800       mA
                                                                                 Dimensions in inches and (millimeters)
PC          Collector Power Dissipation       625       mW
TJ          Junction Temperature              125        
Tstg        Storage Temperature             -55-125      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                    Symbol        Test      conditions           MIN       MAX        UNIT
     Collector-base breakdown voltage       V(BR)CBO    IC= -100A, IE=0                  -40                   V
     Collector-emitter breakdown voltage    V(BR)CEO*   IC= -0.1mA , IB=0                -25                   V
     Emitter-base breakdown voltage         V(BR)EBO    IE= -100A, IC=0                   -6                   V
     Collector cut-off current                ICBO      VCB= -35V ,      IE=0                       -0.1       A
     Collector cut-off current                ICEO      VCE= -20V ,      IB=0                       -0.1       A
                                              hFE(1)    VCE=-1V, IC=-5mA                 45
     DC current gain                          hFE(2)    VCE=-1V, IC=-100mA               80         400
                                              hFE(3)    VCE=-1V, IC=-800mA               40
     Collector-emitter saturation voltage    VCE(sat)   IC= -800mA, IB=-80mA                        -0.5       V
     Base-emitter saturation voltage         VBE(sat)   IC=-800mA, IB=-80mA                         -1.2       V
                                                        VCE=-6V, IC= -20mA
     Transition frequency                       fT                                       150                  MHz
                                                        f=30MHz
 *Pulse Test: pulse width  300

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