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mmbt4403


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                                                                                                MMBT4403
                                                                                              SOT-23 Transistor(NPN)


                                           1. BASE                                                  SOT-23
                                           2. EMITTER
                                           3. COLLECTOR



Features
        Switching transistor

MARKING MMBT4403=2T

MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                    Parameter                    Value     Units
 VCBO        Collector-Base Voltage                      -40          V              Dimensions in inches and (millimeters)
 VCEO        Collector-Emitter Voltage                   -40          V
 VEBO        Emitter-Base Voltage                        -5           V
 IC          Collector Current -Continuous              -0.6          A
 PC          Collector Power Dissipation                 0.3          W
 Tj          Junction Temperature                       150           
 Tstg        Storage Temperature                    -55-150           

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                        Parameter                               Symbol        Test    conditions      MIN    MAX     UNIT

 Collector-base breakdown voltage                                V(BR)CBO   IC=-100A , IE=0           -40              V

 Collector-emitter breakdown voltage                             V(BR)CEO   IC= -1mA , IB=0           -40              V

 Emitter-base breakdown voltage                                  V(BR)EBO   IE=-100A, IC=0             -5              V

 Collector cut-off current                                        ICBO      VCB=-35V, IE=0                   -0.1     A

 Collector cut-off current                                        ICEO      VCE=-35 V, IB=0                  -0.1     A

 Emitter cut-off current                                          IEBO      VEB=-4V,IC=0                     -0.1     A


 DC current gain                                                   hFE      VCE=-2V, IC= -150mA       100    300

 Collector-emitter saturation voltage                           VCE(sat)    IC=-150mA, IB=-15mA              -0.4      V

 Base-emitter saturation voltage                                VBE(sat)    IC=- 150mA, IB=-15mA             -0.95     V

                                                                            VCE= -10V, IC= -20mA
 Transition frequency                                            fT                                   200            MHz
                                                                            f = 100MHz
                            MMBT4403
                          SOT-23 Transistor(NPN)

Typical Characteristics
  MMBT4403
SOT-23 Transistor(NPN)



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