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                                                                                         MMBT2907A
                                                                                      SOT-23 Transistor(PNP)
                                                                                             SOT-23
                                       1. BASE
                                       2. EMITTER
                                       3. COLLECTOR




Features
     Epitaxial planar die construction
     Complementary NPN Type available(MMBT2222A)

MARKING:2F

                                                                                Dimensions in inches and (millimeters)
MAXIMUM RATINGS(TA=25 unless otherwise noted)

 Symbol                    Parameter                        Value          Units
VCBO          Collector-Base Voltage                         -60            V
VCEO          Collector-Emitter Voltage                      -60            V
VEBO          Emitter-Base Voltage                            -5            V
IC            Collector Current -Continuous                  -0.6           A
PC            Collector Dissipation                         0.225           W
TJ            Junction Temperature                           150            
Tstg          Storage Temperature                        -55 to +150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
             Parameter                   Symbol         Test    conditions                  MIN     TYP     MAX     UNIT
Collector-base breakdown voltage         V(BR)CBO     IC=-10A,IE=0                          -60                          V
Collector-emitter breakdown voltage      V(BR)CEO     IC=-10mA,IB=0                         -60                          V
Emitter-base breakdown voltage           V(BR)EBO     IE=-10A,IC=0                           -5                          V
Collector cut-off current                  ICBO       VCB=-50V,IE=0                                          -20     nA
Collector cut-off current                  ICE0       VCE=-30V,VEB(0ff)=-0.5V                                -50     nA
Emitter cut-off current                    IEBO       VEB=-3V,IC=0                                           -10     nA
                                           hFE(1)     VCE=-10V,IC=-0.1mA                     75
                                           hFE(2)     VCE=-10V,IC=-1mA                      100
DC current gain                            hFE(3)     VCE=-10V,IC=-10mA                     100
                                           hFE(4)     VCE=-10V,IC=-150mA                    100              300
                                           hFE(5)     VCE=-10V,IC=-500mA                     50
                                          VCE(sat)    IC=-150mA,IB=-15mA                                     -0.4        V
Collector-emitter saturation voltage
                                          VCE(sat)    IC=-500mA,IB=-50mA                                     -1.6        V
                                          VBE(sat)    IC=-150mA,IB=-15mA                                     -1.3        V
Base-emitter saturation voltage
                                          VBE(sat)    IC=-500mA,IB=-50mA                                     -2.6        V
Transition frequency                          fT      VCE=-20V,IC=-50mA,f=100MHz            200                     MHz
Delay time                                    td                                                             10      nS
                                                      VCC=-30V,IC=-150mA IB1=- 15mA
Rise time                                     tr                                                             25      nS
Storage time                                  tS                                                             225     nS
                                                      VCC=-6V,IC=-150mA,IB1=-IB2=-15mA
Fall time                                     tf                                                             60      nS
                           MMBT2907A
                          SOT-23 Transistor(PNP)


Typical Characteristics

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