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                                                                                                       MMBT3906
                                                                                                    SOT-23 Transistor(PNP)

                                             1. BASE
                                             2. EMITTER                                                           SOT-23
                                             3. COLLECTOR



Features
         As complementary type, the NPN transistor
         MMBT3904 is Recommended
         Epitaxial planar die construction


MARKING: 2A

 MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                Dimensions in inches and (millimeters)
   Symbol                  Parameter                      Value       Units
  VCBO           Collector-Base Voltage                     -40         V
  VCEO           Collector-Emitter Voltage                  -40         V
  VEBO           Emitter-Base Voltage                        -5         V
  IC             Collector Current -Continuous             -0.2         A
  PC             Collector Power Dissipation                0.3         W
  TJ             Junction Temperature                      150          
  Tstg           Storage Temperature                      -55-150       

 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                  Parameter                      Symbol                  Test      conditions            MIN        MAX     UNIT
 Collector-base breakdown voltage                V(BR)CBO         IC= -10A,IE=0                             -40              V
 Collector-emitter breakdown voltage             V(BR)CEO         IC= -1mA, IB=0                            -40              V
 Emitter-base breakdown voltage                  V(BR)EBO         IE=-10A, IC=0                             -5               V
 Collector cut-off current                         ICBO           VCB= -40V, E=0                                    -0.1    A
 Collector cut-off current                         ICEX           VCE=-30V,VBE(off)=-3V                             -50     nA
 Emitter cut-off current                           IEBO           VEB= -5V, IC=0                                    -0.1    A
                                                  hFE(1)          VCE=-1V, IC=-10mA                       100       300
 DC current gain                                  hFE(2)          VCE= -1V, IC=-50mA                        60
                                                  hFE(3)          VCE= -1V, IC=-100mA                       30
 Collector-emitter saturation voltage             VCE(sat)        IC=-50mA, IB=-5mA                                 -0.4     V
 Base-emitter saturation voltage                  VBE(sat)        IC=- 50mA, IB=- 5mA                               -0.95    V
 Transition frequency                                fT           VCE=-20V, IC=-10mA, f=100MHz            250               MHz
 Delay Time                                          td           VCC=-3.0V,VBE=-0.5V                                35     nS
 Rise Time                                           tr           IC=-10mA,IB1=-1.0mA                                35     nS
 Storage Time                                        ts           VCC=-3.0V,IC=-10mA                                225     nS
 Fall Time                                           tf           IB1=IB2=-1.0mA                                     75     nS
CLASSIFICATION OF hFE1
 Rank                                        O                                                          Y
 Range                                  100-200                                                      200-300
                            MMBT3906
                          SOT-23 Transistor(PNP)


Typical Characteristics
  MMBT3906
SOT-23 Transistor(PNP)

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