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MMBTA13,14
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Darlington Amplifier
Marking : MMBTA13:K2D; MMBTA14:K3D
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current -Continuous 0.3 A
PC Collector Power Dissipation 350 mW
RJA Thermal Resistance Junction to Ambient 417 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC= 100uA, IB=0 30 V
Collector-emitter breakdown voltage V(BR)EBO IE= 100A, IC=0 10 V
Collector cut-off current ICBO* VCB=30 V , IE=0 0.1 A
Emitter cut-off current IEBO* VEB= 10V , IC=0 0.1 A
VCE=5V, IC= 10mA MMBTA13 5000
hFE(1) *
MMBTA14 10000
DC current gain
VCE=5V, IC= 100mA MMBTA13 10000
hFE(2) *
MMBTA14 20000
Collector-emitter saturation voltage VCE (sat)* IC=100mA, IB=0.1mA 1.5 V
Base-emitter saturation voltage VBE (sat) * IC=100mA, IB=0.1mA 2 V
Base-emitter voltage VBE * VCE=5V,IC= 100mA 2.0 V
VCE=5V, IC= 10mA
Transition frequency fT 125 MHz
f=100MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 12 pF
* Pulse Test : pulse width300s,duty cycle2%.
MMBTA13,14
SOT-23 Transistor(NPN)
MMBTA13,14
SOT-23 Transistor(NPN)
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