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                                                                                                   MMBTA92
                                                                                               SOT-23 Transistor(PNP)

                                                                                                            SOT-23
                                              1. BASE
                                              2. EMITTER
                                              3. COLLECTOR




Features

        High voltage transistor



MARKING:2D

                                                                                            Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                      Parameter                                       Value                Units
VCBO                   Collector-Base Voltage                                                      -300                  V
VCEO                   Collector-Emitter Voltage                                                   -300                  V
VEBO                   Emitter-Base Voltage                                                          -5                  V
IC                     Collector Current -Continuous                                               -300                 mA
PC                     Collector Power Dissipation                                                  300                 mW
Tj                     Junction Temperature                                                         150                  
Tstg                   Storage Temperature                                                        -55-150                
RJA                    Thermal Resistance, junction to Ambient                                      410                 /mW

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                                  Symbol         Test   conditions          MIN        MAX          UNIT

     Collector-base breakdown voltage                      V(BR)CBO   IC= -100A, IE=0                -300                       V

     Collector-emitter breakdown voltage                   V(BR)CEO   IC= -1mA, IB=0                 -300                       V

     Emitter-base breakdown voltage                        V(BR)EBO   IE= -100A, IC=0                 -5                        V

     Collector cut-off current                               ICBO     VCB=-200V, IE=0                           -0.25           A
     Emitter cut-off current                                 IEBO     VEB= -5V, IC=0                            -0.1            A
                                                            hFE(1)    VCE= -10V, IC= -1mA             60

     DC current gain                                        hFE(2)    VCE= -10V, IC=-10mA             100       200

                                                            hFE(3)    VCE= -10V, IC=-30mA             60

     Collector-emitter saturation voltage                  VCE(sat)   IC=-20mA, IB= -2mA                        -0.2            V

     Base-emitter saturation voltage                       VBE(sat)   IC= -20mA, IB= -2mA                       -0.9            V
                                                                      VCE=-20V, IC= -10mA
     Transition frequency                                     fT                                      50                     MHz
                                                                      f=30MHz
   MMBTA92
SOT-23 Transistor(PNP)

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