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MMDT4413
Complementary NPN/PNP Transistor
SOT-363
Features
Complementary Pair
One 4401-Type NPN,
One 4403-Type PNP
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MAKING: K13
Dimensions in inches and (millimeters)
Maximum Ratings, NPN 4401 Section (TA = 25 unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 0.2 W
RJA Thermal Resistance. Junction to Ambient Air 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
NPN 4401 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 100 A, IC=0 6 V
Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A
Collector cut-off current ICEO VCE= 35 V , IB=0 0.5 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
hFE(1) VCE= 1V, IC= 0.1mA 20
hFE(2) VCE= 1V, IC= 1mA 40
DC current gain hFE(3) VCE= 1V, IC= 10mA 80
hFE(4) VCE= 1V, IC= 150mA 100 300
hFE(5) VCE= 2V, IC= 500mA 40
VCE(sat)1 IC=150 mA, IB= 15mA 0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=500 mA, IB= 50mA 0.75 V
VBE(sat)1 IC= 150 mA, IB= 15mA 0.75 0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC= 500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE= 10V,IC= 20mA,f=100MHz 250 MHz
Output Capacitance Cob VCB=5V, IE= 0,f=1MHz 6.5 pF
Delay time td VCC=30V, 15 nS
Rise time tr VBE=2.0V,IC=150mA ,IB1=15mA 20 nS
Storage time tS 225 nS
VCC=30V, IC=150mA,IB1=- IB2= 15mA
Fall time tf 30 nS
MMDT4413
Complementary NPN/PNP Transistor
Maximum Ratings, PNP 4403 Section (TA = 25 unless otherwise specified)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Power Dissipation 0.2 W
RJA Thermal Resistance. Junction to Ambient Air 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
PNP 4403 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-100A , IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 A
Collector cut-off current ICEO VCE=-35 V , IB=0 -0.5 A
Emitter cut-off current IEBO VEB=-5V , IC=0 -0.1 A
hFE(1) VCE=-1 V, IC= -0.1mA 30
hFE(2) VCE=-1 V, IC= -1mA 60
DC current gain
hFE(3) VCE=-1 V, IC= -10mA 100
hFE(4) VCE=-2 V, IC= -150mA 100 300
hFE(5) VCE=-2 V, IC= -500mA 20
VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V
VBE(sat)1 IC= -150 mA, IB=-15mA -0.75 -0.95 V
Base-emitter saturation voltage VBE(sat)2 IC= -500 mA, IB=-50mA -1.3 V
VCE= -10V, IC= -20mA
Transition frequency fT 200 MHz
f = 100MHz
VCB=-10V, IE= 0
Output Capacitance Cob 8.5 pF
f=1MHz
Delay time td 15 nS
VCC=-30V, VBE=-2V
Rise time tr 20 nS
IC=-150mA , IB1=-15mA
Storage time tS 225 nS
VCC=-30V, IC=-150mA
Fall time tf 30 nS
IB1=-IB2= -15mA
MMDT4413
Complementary NPN/PNP Transistor
Typical Characteristics
MMDT4413
Complementary NPN/PNP Transistor
MMDT4413
Complementary NPN/PNP Transistor
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