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MMDT2907A
SOT-363 Transistor(PNP)
SOT-363
Features
Complementary NPN Type available MMDT2222A
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -600 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
MARKING: K2F
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -10A, IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-50V, IE=0 -10 nA
Collector cut-off current ICEX VCE=-30V,VEB(Off)=-0.5V -50 nA
Emitter cut-off current IEBO VEB=-5V, IC=0 -10 nA
hFE(1) VCE=-10V, IC= -0.1mA 75
hFE(2) VCE=-10V, IC= -1mA 100
DC current gain hFE(3) VCE=-10V, IC=-10mA 100
hFE(4) VCE=-10V, IC= -150mA 100 300
hFE(5) VCE=-10V, IC=-500mA 50
VCE(sat)1 IC=-150mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500mA, IB=- 50mA -1.6 V
VBE(sat)1 IC=-150mA, IB=-15mA -1.3 V
Base-emitter saturation voltage
VBE(sat)2 IC=-500mA, IB= -50mA -2.6 V
Transition frequency fT VCE=-20V, IC= -50mA,f=100MHz 200 MHz
Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 8 pF
Input Capacitance Cib VEB=-2V, IC= 0,f=1MHz 30 pF
Delay time td 10 nS
VCC=-30V,IC=-150mA, IB1=-15mA
Rise time tr 40 nS
Storage time tS VCC=-6V, IC=-150mA, 225 nS
Fall time tf IB1= IB2= -15mA 60 nS
MMDT2907A
SOT-363 Transistor(PNP)
Typical Characteristics
MMDT2907A
SOT-363 Transistor(PNP)
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