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                                                                                                            MPSA06
                                                                                                      TO-92 Transistor (NPN)


                                                     1.
                                                                                                                 TO-92
                                                           EMITTER

                                                     2.    BASE

                                                     3. COLLECTOR




Features

        Power amplifier

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                         Parameter             Value               Units
VCBO        Collector-Base Voltage                        80               V
VCEO        Collector-Emitter Voltage                     80               V
VEBO        Emitter-Base Voltage                          4                V
                                                                                                Dimensions in inches and (millimeters)
IC          Collector Current -Continuous                 0.5              A
PC          Collector Power Dissipation               625                  mW
TJ          Junction Temperature                      150                  
Tstg        Storage Temperature                      -55-150               
RJA         Thermal Resistance,Junction to Ambient    417                /W

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                                        Symbol           Test   conditions         MIN     MAX     UNIT

     Collector-base breakdown voltage                           V(BR)CBO       IC=100A, IE=0               80                V

     Collector-emitter breakdown voltage                        V(BR)CEO       IC= 1mA , IB=0              80                V

     Emitter-base breakdown voltage                             V(BR)EBO       IE=100A, IC=0                4                V

     Collector cut-off current                                    ICBO         VCB=80V, IE=0                       0.1      A

     Collector cut-off current                                    ICEO         VCE=60V, IB=0                       0.1      A

     Emitter cut-off current                                      IEBO         VEB=3V, IC=0                        0.1      A

                                                                 hFE1          VCE=1V, IC= 100mA           100     400
     DC current gain
                                                                 hFE2          VCE=1V, IC= 10mA            100

     Collector-emitter saturation voltage                       VCE(sat)       IC=100mA, IB=10mA                   0.25      V

     Base-emitter saturation voltage                            VBE(sat)       IC= 100mA, IB=10mA                  1.2       V

                                                                               VCE=2V, IC= 10mA
     Transition frequency                                          fT                                      100             MHz
                                                                               f = 100MHz
                              MPSA06
                          TO-92 Transistor (NPN)

Typical Characteristics
    MPSA06
TO-92 Transistor (NPN)

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