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MPS2222A
TO-92 Transistor (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
Features
Complementary NPN Type available (MPS2907A)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
Dimensions in inches and (millimeters)
IC Collector Current -Continuous 600 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V
Collector cut-off current ICBO VCB= 60V, IE=0 10 nA
Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V 10 nA
Emitter cut-off current IEBO VEB= 3 V, IC=0 100 nA
hFE(1) VCE=10V,IC= 150mA 100 300
DC current gain hFE(2) VCE=10V,IC= 0.1mA 40
*
hFE(3) VCE=10V, IC= 500mA 42
*
VCE(sat)(1) IC= 500mA, IB=50mA 0.6 V
Collector-emitter saturation voltage *
VCE(sat)(2) IC= 150mA, IB=15mA 0.3 V
*
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Delay time td VCC=30V, VEB(Off)=-0.5V, 10 nS
Rise time tr IC=150mA,IB1=15mA 25 nS
Storage time tS 225 nS
VCC=30V,Ic=150mA,IB1=IB2=15mA
Fall time tf 60 nS
Transition frequency fT VCE=20V, IC=20mA, f=100MHz 300 MHz
*
pulse test
CLASSIFICATION OF hFE(1)
Rank L H
Range 100-200 200-300
MPS2222A
TO-92 Transistor (NPN)
Typical characteristics
MPS2222A
TO-92 Transistor (NPN)
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