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                                                                                                 A42(NPN)
                                                                                           TO-92 Bipolar Transistors


                                                                    1. EMITTER
                                                                                                        TO-92
                                                                    2. BASE

                                                                    3. COLLECTOR



Features
         High voltage

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol                        Parameter                       Value           Units
VCBO           Collector-Base Voltage                          300               V
VCEO           Collector-Emitter Voltage                       300               V
VEBO           Emitter-Base Voltage                             5                V
IC             Collector Current -Continuous                   500               mA
PC             Collector Power Dissipation                     625               mW
                                                                                          Dimensions in inches and (millimeters)
TJ             Junction Temperature                            150               
Tstg           Storage Temperature                            -55-150            
RJA            Thermal Resistance, junction to Ambient         200            /mW
RJC            Thermal Resistance, unction to Case             83.3           /mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                        Symbol         Test      conditions              MIN     TYP       MAX    UNIT
 Collector-base breakdown voltage                V(BR)CBO     IC=100uA, IE=0                      300                       V
 Collector-emitter breakdown voltage             V(BR)CEO     IC=1mA, IB=0                        300                       V
 Emitter-base breakdown voltage                  V(BR)EBO     IE=100A, IC=0                        5                        V
 Collector cut-off current                           ICBO     VCB=200V, IE=0                                        0.25   A
 Emitter cut-off current                             IEBO     VEB=5V, IC=0                                          0.1    A
                                                     hFE(1)   VCE=10V, IC=1mA                     60
 DC current gain                                     hFE(2)   VCE=10V, IC=10mA                    80                250
                                                     hFE(3)   VCE=10V, IC=30mA                    75
 Collector-emitter saturation voltage             VCE(sat)    IC=20mA, IB=2mA                                       0.2     V
 Base-emitter saturation voltage                  VBE(sat)    IC=20mA, IB=2mA                                       0.9     V
 Transition frequency                                  fT     VCE=20V, IC=10mA,f=30MHZ            50                       MHz


CLASSIFICATION OF hFE(2)
       Rank                                A                        B1                   B2                     C

       Range                            80-100                  100-150                150-200               200-250
                              A42(NPN)
                          TO-92 Bipolar Transistors


Typical Characteristics
    A42(NPN)
TO-92 Bipolar Transistors

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