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                                                                                                       BC847BV
                                                                                           SOT-563 Dual Transistor (NPN)
                                                                                                              SOT-563

                                                                                                                1.600




Features                                                                                      1.200                                1.600


        Epitaxial Die Construction
        Complementary PNP Type Available                                                              0.220

           (BC857BV)                                                                                           0.500

        Ultra-Small Surface Mount Package
                                                                                                                               0.565


Marking: K4V
MAXIMUM RATINGS(TA=25 unless otherwise noted)                                              Dimensions in inches and (millimeters)
 Symbol                         Parameter                             Value        Units
 VCBO          Collector-Base Voltage                                   50          V
 VCEO          Collector-Emitter Voltage                                45          V
 VEBO          Emitter-Base Voltage                                     6           V
 IC            Collector Current -Continuous                           0.1          A
 PC            Collector Power Dissipation                             0.15         W
 RJA           Thermal Resistance. Junction to Ambient Air             833         /W
 TJ            Junction Temperature                                    150          
 Tstg          Storage Temperature                                  -55 to +150     

ELECTRICAL CHARACTERISTICS (Tamb=25                             unless        otherwise     specified)

             Parameter                         Symbol        Test     conditions                       MIN         TYP       MAX       UNIT

Collector-base breakdown voltage               V(BR)CBO   IC=10A,IE=0                                   50                                 V

Collector-emitter breakdown voltage            V(BR)CEO   IC=10mA,IB=0                                  45                                 V

Emitter-base breakdown voltage                 V(BR)EBO   IE=1A,IC=0                                     6                                 V

Collector cut-off current                        ICBO     VCB=30V,IE=0                                                       15            nA

Emitter cut-off current                          IEBO     VEB=5V,IC=0                                                        100           nA

DC current gain                                 hFE(1)    VCE=5V,IC=2mA                                200                   450
                                                          IC=10mA,IB=0.5mA                                                   100
Collector-emitter saturation voltage           VCE(sat)                                                                                    mV
                                                          IC=100mA,IB=5mA                                                    300
                                                          IC=10mA,IB=0.5mA                                             700
Base-emitter saturation voltage                VBE(sat)                                                                                    mV
                                                          IC=100mA,IB=5mA                                              900
                                                          VCE=5V,IC=2mA                                580             660   700
Base-emitter voltage                             VBE                                                                                       mV
                                                          VCE=5V,IC=10mA                                                     770
Transition frequency                              fT      VCE=5V,IC=10mA,f=100MHz                      100                             MHz

Output     capacitance                           Cob      VCB=10V,IE=0,f=1MHz                                                4.5           pF
                                                          VCE=5V,Rs=2k,
Noise Figure                                     NF                                                                          10            dB
                                                          f=1kHz,BW=200Hz
                                BC847BV
                          SOT-563 Dual Transistor (NPN)


Typical Characteristics

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