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                                                                                                          BC857BV
                                                                                             SOT-563 Dual Transistor (PNP)
                                                                                                    SOT-563

                                                                                                                  1.600




Features                                                                                        1.200                                   1.600


        Epitaxial Die Construction
        Complementary NPN Types Available                                                               0.220

        (BC847BV)                                                                                                0.500

        Ultra-Small Surface Mount Package
                                                                                                                                   0.565
Marking: K5V

MAXIMUM RATINGS (TA=25 unless otherwise noted )                                              Dimensions in inches and (millimeters)

 Symbol                         Parameter                               Value        Units
 VCBO          Collector-Base Voltage                                    -50          V
 VCEO          Collector-Emitter Voltage                                 -45          V
 VEBO          Emitter-Base Voltage                                       -5          V
 IC            Collector Current -Continuous                             -0.1         A
 PC            Collector Power Dissipation                               0.15         W
 RJA           Thermal Resistance. Junction to Ambient Air               833         /W
 TJ            Junction Temperature                                      150          
 Tstg          Storage Temperature                                    -55 to +150     

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

             Parameter                         Symbol          Test     conditions                       MIN             TYP    MAX         UNIT

Collector-base breakdown voltage               V(BR)CBO      IC=-10A,IE=0                                 -50                                    V

Collector-emitter breakdown voltage            V(BR)CEO      IC=-10mA,IB=0                                -45                                    V

Emitter-base breakdown voltage                 V(BR)EBO      IE=-1A,IC=0                                   -5                                    V

Collector cut-off current                        ICBO        VCB=-30V,IE=0                                                      -15             nA

DC current gain                                   hFE        VCE=-5V,IC=-2mA                              220                   475

                                               VCE(sat)(1)   IC=-10mA,IB=-0.5mA                                                 -0.1             V
Collector-emitter saturation voltage
                                               VCE(sat)(2)   IC=-100mA,IB=-5mA                                                  -0.4             V

                                               VBE(sat)(1)   IC=-10mA,IB=-0.5mA                                          -0.7                    V
Base-emitter saturation voltage
                                               VBE(sat)(2)   IC=-100mA,IB=-5mA                                           -0.9                    V

                                                 VBE(1)      VCE=-5V,IC=-2mA                              -0.6                  -0.75            V
Base-emitter voltage
                                                 VBE(2)      VCE=-5V,IC=-10mA                                                   -0.82            V

Transition frequency                               fT        VCE=-5V,IC=-10mA,f=100MHz                    100                                   MHz

Collector output capacitance                      Cob        VCB=-10V,IE=0,f=1MHz                                               4.5             pF
                                                             VCE=-5V,Ic=-0.2mA,
Noise figure                                      NF                                                                             10             dB
                                                             f=1kHZ,Rs=2K,BW=200Hz
                                BC857BV
                          SOT-563 Dual Transistor (PNP)


Typical Characteristics

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