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                                                                                                  BCP51,52,53
                                                                                                SOT-223 Transistor(PNP)
                                                                                                     SOT-223
                                              1. BASE
                                              2. COLLECTOR
                       1
                                              3. EMITTER


Features
        For AF driver and output stages
        High collector current
        Low collector-emitter saturation voltage
        Complementary types: BCP54...BCP56 (NPN)




MAXIMUM RATINGS (TA=25 unless otherwise noted)                                         Dimensions in inches and (millimeters)

Symbol       Parameter                                        BCP51      BCP52         BCP53        Units
VCBO         Collector-Base Voltage                             -45        -60            -100        V
VCEO         Collector-Emitter Voltage                          -45        -60            -80         V
VEBO         Emitter-Base Voltage                                           -5                        V
IC           Collector Current -Continuous                                  -1                        A
PC           Collector Power Dissipation                                   1.5                       W
RJA          Thermal Resistance Junction to Ambient                         94                      /W
Tstg         Storage Temperature Range                                  -65to+150                    
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
          Parameter                                     Symbol           Test    conditions                  MIN    MAX    UNIT

Collector-base breakdown voltage           BCP51                                                              -45
                                           BCP52        V(BR)CBO       IC=- 0.1mA,IE=0                        -60           V
                                           BCP53                                                             -100
  Collector-emitter breakdown voltage         BCP51                                                           -45
                                              BCP52     V(BR)CEO       IC= -10mA,IB=0                         -60           V
                                              BCP53                                                           -80

Base-emitter breakdown voltage                          V(BR)EBO       IC= -10A,IE=0                          -5            V

Collector cut-off current                                    ICBO      VCB= -30 V, IE=0                             -100   nA

                                                            hFE(1)     VCE=-2V, IC=-5mA                       25

DC current gain                                             hFE(2)     VCE= -2V, IC=-150m A                   63    250

                                                            hFE(3)     VCE= -2V, IC=-500m A                   25

Collector-emitter saturation voltage                        VCE(sat)   IC=-500mA,IB=-50mA                           -0.5    V

Base-emitter voltage                                         VBE       VCE=-2V, IC=-500m A                           -1     V

Transition frequency                                           fT      VCE=-10V,IC=-50mA,f=100MHz            100           MHz

CLASSIFICATION OF           hFE(2)
  Rank                           BCP51-10, BCP52-10, BCP53-10                             BCP51-16, BCP52-16, BCP53-16
  Range                                            63-160                                                 100-250
                            BCP51,52,53
                          SOT-223 Transistor(PNP)


Typical Characteristics
  BCP51,52,53
SOT-223 Transistor(PNP)

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