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C945(NPN)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Excellent hFE linearity
Low noise
Complementary to A733
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
5 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=100uA , IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100mA, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA
Collector cut-off current ICEO VCE=45V 0.1 uA
Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA
hFE(1) VCE=6 V , IC=1mA 70 700
DC current gain
hFE(2) VCE=6 V , IC=0.1mA 40
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Transition frequency fT VCE=6V,IC=10mA,f =30 MHz 200 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 3.0 pF
VCE=6V,IC=0.1mA
Noise figure NF 10 dB
RG=10k,f=1kMHZ
CLASSIFICATION OF hFE(1)
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
C945(NPN)
TO-92 Bipolar Transistors
Typical Characteristics
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