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                                                                                               CZT122
                                                                                       SOT-223 Transistor(NPN)
                                               1. BASE


                        1
                                               2. COLLECTOR
                                                                                                SOT-223
                                               3. EMITTER



Features
       Complementary to CZT127
       Silicon Power Darlington Transistors
       Low speed switching and amplifier applications



MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol               Parameter                  Value       Units
VCBO      Collector-Base Voltage                 100         V
VCEO      Collector-Emitter Voltage              100         V
                                                                                    Dimensions in inches and (millimeters)
VEBO      Emitter-Base Voltage                     5         V
IC        Collector Current -Continuous            5         A
PC        Collector Power Dissipation              1         W
Tj        Junction Temperature                   150         
Tstg      Storage Temperature                  -65-150       


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

            Parameter                         Symbol         Test   conditions                MIN     TYP     MAX     UNIT

 Collector-base breakdown voltage             V(BR)CBO    IC=1m A,IE=0                        100                       V

 Collector-emitter breakdown voltage          V(BR)CEO    IC=30mA,IB=0                        100                       V

 Collector cut-off current                      ICBO      VCB=100V,IE=0                                        200     uA

 Base cut-off current                           ICEO      VCE=50V,IB=0                                         500     uA

 Emitter cut-off current                        IEBO      VEB=5V,IC=0                                           2      mA

                                               hFE(1)     VCE=3V,IC=0.5A                      1000
 DC current gain
                                               hFE(2)     VCE=3V,IC=3A                        1000

                                              VCE(sat)1   IC=3A,IB=12mA                                         2       V
 Collector-emitter saturation voltage
                                              VCE(sat)2   IC=5A,IB=20mA                                         4       V

 Base-emitter voltage                         VBE(on)     VCE=3V,IC=3A                                         2.5      V

 Transition frequency                            fT       VCE=4V,IC=3A,f=1MHz                   4                      MHz

 Collector output capacitance                   Cob       VCB=10V, IE=0, f=1.0MHz                              200     pF
                                  CZT122
                            SOT-223 Transistor(NPN)




Typical   Characteristics



TypicalCharacteristics           CZT122

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