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                                                                                                CZT31C
                                                                                         SOT-223 Transistor(NPN)
                                                  1. BASE                                          SOT-223
                                                  2. COLLECTOR
                         1
                                                  3. EMITTER



Features
       Complementary to CZT32C
       Power amplifier applications up to 3.0 amps.




                                                                                     Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
       Symbol                                      Parameter                                 Value              Units
VCBO                  Collector-Base Voltage                                                  100                 V
VCEO                  Collector-Emitter Voltage                                               100                 V
VEBO                  Emitter-Base Voltage                                                     5                  V
IC                    Collector Current -Continuous                                            3                  A
PC                    Collector Power Dissipation                                              1                  W
Tj                    Junction Temperature                                                    150                 
Tstg                  Storage Temperature                                                   -65-150               
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
              Parameter                        Symbol            Test   conditions              MIN     TYP     MAX     UNIT

 Collector-base breakdown voltage              V(BR)CBO        IC=1m A,IE=0                     100                      V

 Collector-emitter breakdown voltage           V(BR)CEO        IC=30mA,IB=0                     100                      V

 Emitter-base breakdown voltage                V(BR)EBO        IE=3mA,IC=0                         5                     V

 Collector cut-off current                         ICBO        VCB=100V,IE=0                                    200      uA

 Base cut-off current                              ICEO        VCE=60V,IB=0                                     300      uA

 Emitter cut-off current                           IEBO        VEB=5V,IC=0                                       1       mA

                                                  hFE(1)*      VCE=4V,IC=1A                        25
 DC current gain
                                                  hFE(2) *     VCE=4V,IC=3A                        10           100

 Collector-emitter saturation voltage          VCE(sat) *      IC=3.0A,IB=375mA                                 1.2      V

 Base-emitter voltage                              VBE *       VCE=4V,IC=3A                                     1.8      V

 Transition frequency                                fT        VCE=10V,IC=500mA,f=1MHz             3                    MHz

* Pulsed , 2%D.C.
                                CZT31C
                          SOT-223 Transistor(NPN)


Typical Characteristics

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