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dtc143z


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                                                         DTC143ZE/DTC143ZUA/DTC143ZCA
                                                                  DTC143ZKA/DTC143ZSA
                                                                                Digital Transistor(NPN)

Features
1.   Built-in bias resistors enable the configuration of an inverter circuit without
     connecting external input resistors (see equivalent circuit).
2.   The bias resistors consist of thin-film resistors with complete isolation to
     allow negative biasing of the input. They also have the advantage of almost
     completely eliminating parasitic effects.
3.   Only the on/off conditions need to be set for operation, making
      device design easy.


PIN CONNENCTIONS AND MARKING

 DTC143ZE                                                    DTC143ZUA




     SOT-523        Addreviated symbol: E23                    SOT-323       Addreviated symbol: E23


                                                             DTA114ECA
 DTC143ZKA                                                   DTC143ZCA



   SOT-23
 SOT-23-3L
                      Addreviated symbol: E23                SOT-23        Addreviated symbol: E23



 DTC143ZSA




 TO-92S
                                                           DTC143ZE/DTC143ZUA/DTC143ZCA
                                                                    DTC143ZKA/DTC143ZSA
                                                                                      Digital Transistor(NPN)
Absolute maximum ratings(Ta=25)
                                                                     Limits (DTC143Z )
             Parameter                    Symbol                                                                   Unit
                                                     E        UA           CA             KA           SA
 Collector-base     voltage               V(BR)CBO                               50                                 V
 Collector-emitter voltage                V(BR)CEO                               50                                 V
 Emitter-base     voltage                 V(BR)EBO                               5                                  V
 Collector current                           IC                                  100                               mA
 Collector Power dissipation                PC       150                   200                         300         mW
 Junction temperature                        Tj                                  150                                
 Storage temperature                       Tstg                             -55~150                                 
Electrical characteristics (Ta=25)
 Parameter                     Symbol       Min.      Typ          Max.           Unit         Conditions
                                VI(off)                             0.5                        VCC=5V ,IO=100A
 Input voltage                                                                        V
                                VI(on)      1.3                                                VO=0.3V ,IO=5 mA
 Output voltage                 VO(on)                0.1           0.3               V        IO/II=5mA/0.25mA
 Input current                    II                                1.8              mA        VI=5V
 Output current                 IO(off)                             0.5              A         VCC=50V ,VI=0
 DC current gain                 GI          80                                                VO=5V ,IO=10mA
 Input resistance                R1         3.29      4.7           6.11             K
 Resistance ratio              R2/R1         8           10         12
 Transition frequency             fT                  250                         MHz          VCE=10V ,IE=-5mA,f=100MHz

Typical Characteristics



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