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                                                          DTC144EE/DTC144EUA/DTC144ECA
                                                                  DTC144EKA/DTC144ESA
                                                                             Digital Transistor(NPN)


Features
1.   Built-in bias resistors enable the configuration of an inverter
     circuit without connecting external input resistors
      (see equivalent circuit).
2.   The bias resistors consist of thin-film resistors with complete
      isolation to allow negative biasing of the input.
      They also have the advantage of almost completely
      eliminating parasitic effects.
3.   Only the on/off conditions need to be set for operation, making
     device design easy.

PIN CONNENCTIONS AND MARKING

 DTC144EE                                                    DTC144EUA




     SOT-523         Addreviated symbol: 26                    SOT-323     Addreviated symbol: 26


                                                             DTA114ECA
 DTC144EKA                                                   DTC144ECA



   SOT-23
 SOT-23-3L
                       Addreviated symbol: 26                SOT-23      Addreviated symbol: 26



 DTC144ESA




 TO-92S
                                                               DTC144EE/DTC144EUA/DTC144ECA
                                                                       DTC144EKA/DTC144ESA
                                                                                      Digital Transistor(NPN)
Absolute maximum ratings(Ta=25)
                                                                          Limits (DTC144E )
               Parameter                  Symbol                                                                      Unit
                                                           E        UA           CA           KA         SA
Collector-base    voltage                 V(BR)CBO                               50                                    V
Collector-emitter voltage                 V(BR)CEO                               50                                    V
Emitter-base     voltage                  V(BR)EBO                               5                                     V
Collector current                            IC                                 100                                   mA
Collector Power dissipation                 PC             150                  200                      300          mW
Junction temperature                         Tj                                 150                                    
Storage temperature                        Tstg                                -55~150                                 

Electrical characteristics (Ta=25)
     Parameter                Symbol     Min.        Typ          Max.         Unit                  Conditions
                               VI(off)                              0.5                            VCC=5V ,IO=100

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