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                                                                                                     EMX1
                                                                              General Purpose Transistors (Dual Transistors)


                                                                                                          SOT-563
                             1
                                                                                                               1.600


Features
        Two 2SC2412K chips in a SOT-563 package.
                                                                                          1.200                                 1.600
        Mounting possible with SOT-563 automatic mounting machines.
        Transistor elements are independent, eliminating interference.
                                                                                                  0.220
        Mounting cost and area can be cut in half.

MARKING:X1                                                                                                    0.500



                                                                                                                              0.565

MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                       Dimensions in inches and (millimeters)
       Symbol                    Parameter                 Value      Units
VCBO                Collector-Base Voltage                   60           V
VCEO                Collector-Emitter Voltage                50           V
VEBO                Emitter-Base Voltage                     7            V
IC                  Collector Current -Continuous           150          mA
PC                  Collector Power Dissipation             150          mW
TJ                  Junction Temperature                    150           
Tstg                Storage Temperature                    -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise                                specified)

            Parameter                           Symbol       Test    conditions                      MIN               TYP   MAX        UNIT

 Collector-base breakdown voltage               V(BR)CBO   IC=50A,IE=0                                60                                 V

 Collector-emitter breakdown voltage            V(BR)CEO   IC=1mA,IB=0                                50                                 V

 Emitter-base breakdown voltage                 V(BR)EBO   IE=50A,IC=0                                    7                              V

 Collector cut-off current                        ICBO     VCB=60V,IE=0                                                      0.1        A

 Emitter cut-off current                          IEBO     VEB=7V,IC=0                                                       0.1        A

 DC current gain                                  hFE      VCE=6V,IC=1mA                              120                    560

 Collector-emitter saturation voltage           VCE(sat)   IC=50mA,IB=5mA                                                    0.4         V

 Transition frequency                              fT      VCE=12V,IC=2mA,f=100MHz                                     180              MHz

 Collector output capacitance                     Cob      VCB=12V,IE=0,f=1MHz                                         2.0   3.5        pF
                                           EMX1
                          General Purpose Transistors (Dual Transistors)


Typical Characteristics
                 EMX1
General Purpose Transistors (Dual Transistors)

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