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                                                                                                  FMMT491
                                                                                              SOT-23 Transistor(NPN)

                                                                                                      SOT-23
                                               1. BASE
                                               2. EMITTER
                                               3. COLLECTOR




Features
        Low equivalent on-resistance


Marking :491

MAXIMUM RATINGS(TA=25 unless otherwise noted)

    Symbol                    Parameter                      Value         Units
VCBO           Collector-Base Voltage                          80           V            Dimensions in inches and (millimeters)

VCEO           Collector-Emitter Voltage                       60           V
VEBO           Emitter-Base Voltage                            5            V
IC             Collector Current -Continuous                   1            A
PC             Collector Power Dissipation                    500          mW
Tj             Junction Temperature                           150           
Tstg           Storage Temperature                           -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                        Symbol               Test    conditions              MIN     TYP     MAX     UNIT

    Collector-base breakdown voltage            V(BR)CBO        IC=100A,IE=0                        80                       V

    Collector-emitter breakdown voltage        V(BR)CEO1        IC=10mA,IB=0                        60                       V

    Emitter-base breakdown voltage              V(BR)EBO        IE=100A,IC=0                         5                       V

    Collector cut-off current                     ICBO          VCB=60V,IE=0                                        0.1      A

    Emitter cut-off current                       IEBO          VEB=4V,IC=0                                         0.1      A

                                                 hFE(1)         VCE=5V,IC=1mA                       100

                                                hFE(2) 1        VCE=5V,IC=500mA                     100             300
    DC current gain
                                                hFE(3) 1        VCE=5V,IC=1A                        80

                                                hFE(4) 1        VCE=5V,IC=2A                        30

                                               VCE(sat)1 1      IC=500mA,IB=50mA                                    0.25     V
    Collector-emitter saturation voltage
                                               VCE(sat)2 1      IC=1A,IB=100mA                                      0.5      V

    Base-emitter saturation voltage             VBE(sat) 1      IC=1A,IB=100mA                                      1.1      V

    Base-emitter voltage                          VBE1          VCE=5V,IC=1A                                         1       V

    Transition frequency                           fT           VCE=10V,IC=50mA,,f=100MHz           150                     MHz

    Collector output capacitance                  Cob           VCB=10V,f=1MHz                                       10      pF
1
    Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.
                             FMMT491
                          SOT-23 Transistor(NPN)


Typical Characteristics

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