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KTA1273
TO-92L Transistor (PNP)
1. EMITTER
TO-92L
4.700
5.100
2. COLLECTOR
3. BASE
7.800
8.200
3
2 0.600
1
Features 0.800
Complementary to KTC3205. 0.350
0.550
13.800
14.200
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
1.270 TYP
VCBO Collector-Base Voltage -30 V
2.440
2.640
VCEO Collector-Emitter Voltage -30 V
0.000 1.600
VEBO Emitter-Base Voltage -5 V 0.300
0.350
IC Collector Current -Continuous -2 A 0.450
3.700
PC Collector Power Dissipation 1 W 4.100 1.280
1.580
TJ Junction Temperature 150 4.000
Tstg Storage Temperature -55-150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO IC= -10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current ICBO VCB=-30V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A
DC current gain hFE VCE= -2V, IC=-500mA 100 320
Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB=-30mA -2.0 V
Base-emitter voltage VBE VCE= -2V, IC= -500mA -1.0 V
Transition frequency fT VCE= -2V, IC= -500mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHZ 48 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 100-200 160-320
KTA1273
TO-92L Transistor (PNP)
Typical Characteristics
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